ZXMN2A14F

ZXMN2A14FTA vs ZXMN2A14F vs ZXMN2A14FTA-CUT TAPE

 
PartNumberZXMN2A14FTAZXMN2A14FZXMN2A14FTA-CUT TAPE
DescriptionMOSFET N Channel
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4.1 A--
Rds On Drain Source Resistance110 mOhms--
Vgs Gate Source Voltage12 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelDigi-ReelR Alternate Packaging-
Height1.02 mm--
Length3.04 mm--
SeriesZXMN2A1ZXMN2A1-
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFET--
Width1.4 mm--
BrandDiodes Incorporated--
Fall Time9.5 ns9.5 ns-
Product TypeMOSFET--
Rise Time5.3 ns5.3 ns-
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time16.6 ns16.6 ns-
Typical Turn On Delay Time4 ns4 ns-
Unit Weight0.000282 oz0.000282 oz-
Package Case-TO-236-3, SC-59, SOT-23-3-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-23-3-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-1W-
Drain to Source Voltage Vdss-20V-
Input Capacitance Ciss Vds-544pF @ 10V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-3.4A (Ta)-
Rds On Max Id Vgs-60 mOhm @ 3.4A, 4.5V-
Vgs th Max Id-700mV @ 250μA-
Gate Charge Qg Vgs-6.6nC @ 4.5V-
Pd Power Dissipation-1 W-
Vgs Gate Source Voltage-12 V-
Id Continuous Drain Current-4.1 A-
Vds Drain Source Breakdown Voltage-20 V-
Rds On Drain Source Resistance-110 mOhms-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZXMN2A14FTA MOSFET N Channel
ZXMN2A14F New and Original
ZXMN2A14FTA New and Original
ZXMN2A14FTC New and Original
ZXMN2A14FTA-CUT TAPE New and Original
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