ZXMN2B1

ZXMN2B14FHTA vs ZXMN2B14FH vs ZXMN2B14FHTA/2B4

 
PartNumberZXMN2B14FHTAZXMN2B14FHZXMN2B14FHTA/2B4
DescriptionMOSFET 20V N-Channel MOSFET w/low gate drive capMOSFET, N CHANNEL, 20V, 4.3A, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:4.3A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.055ohm, Rds(on) Test Voltage Vgs:4.5V,
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4.3 A--
Rds On Drain Source Resistance55 mOhms--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.02 mm--
Length3.04 mm--
ProductMOSFET Small Signal--
SeriesZXMN2B--
Transistor Type1 N-Channel--
Width1.4 mm--
BrandDiodes Incorporated--
Fall Time5.2 ns--
Product TypeMOSFET--
Rise Time5.2 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30 ns--
Typical Turn On Delay Time3.7 ns--
Unit Weight0.000282 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZXMN2B14FHTA MOSFET 20V N-Channel MOSFET w/low gate drive cap
ZXMN2B14FH MOSFET, N CHANNEL, 20V, 4.3A, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:4.3A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.055ohm, Rds(on) Test Voltage Vgs:4.5V,
ZXMN2B14FHTA New and Original
ZXMN2B14FHTA/2B4 New and Original
ZXMN2B14FHTC New and Original
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