ZXMN3A03

ZXMN3A03E6TA vs ZXMN3A03E6 vs ZXMN3A03E6TA-CUT TAPE

 
PartNumberZXMN3A03E6TAZXMN3A03E6ZXMN3A03E6TA-CUT TAPE
DescriptionMOSFET 30V N Chnl UMOSMOSFET, N CHANNEL, 30V, 4.6A, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:4.6A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.05ohm, Rds(on) Test Voltage Vgs:10V,
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-26-6--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current4.6 A--
Rds On Drain Source Resistance65 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.1 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.3 mm--
Length3.1 mm--
ProductMOSFET Small Signal--
SeriesZXMN3A--
Transistor Type1 N-Channel--
TypeMOSFET--
Width1.8 mm--
BrandDiodes Incorporated--
Fall Time6.4 ns--
Product TypeMOSFET--
Rise Time6.4 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time16 ns--
Typical Turn On Delay Time2.9 ns--
Unit Weight0.000529 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZXMN3A03E6TA MOSFET 30V N Chnl UMOS
ZXMN3A03E6TC MOSFET 30V N Chnl UMOS
ZXMN3A03E6 MOSFET, N CHANNEL, 30V, 4.6A, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:4.6A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.05ohm, Rds(on) Test Voltage Vgs:10V,
ZXMN3A03E6TA New and Original
ZXMN3A03E6TA-CUT TAPE New and Original
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