ZXMN3A06DN8T

ZXMN3A06DN8TA vs ZXMN3A06DN8TC vs ZXMN3A06DN8TA-CUT TAPE

 
PartNumberZXMN3A06DN8TAZXMN3A06DN8TCZXMN3A06DN8TA-CUT TAPE
DescriptionMOSFET Dl 30V N-Chnl UMOSMOSFET 2N-CH 30V 4.9A 8SOIC
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current6.2 A--
Rds On Drain Source Resistance35 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.1 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelTape & Reel (TR) Alternate Packaging-
Height1.5 mm--
Length5 mm--
SeriesZXMN3--
Transistor Type2 N-Channel--
TypeMOSFET--
Width4 mm--
BrandDiodes Incorporated--
Fall Time9.4 ns--
Product TypeMOSFET--
Rise Time6.4 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time21.6 ns--
Typical Turn On Delay Time3 ns--
Unit Weight0.002610 oz--
Package Case-8-SOIC (0.154", 3.90mm Width)-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-SOP-
FET Type-2 N-Channel (Dual)-
Power Max-1.8W-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-796pF @ 25V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-4.9A-
Rds On Max Id Vgs-35 mOhm @ 9A, 10V-
Vgs th Max Id-1V @ 250μA (Min)-
Gate Charge Qg Vgs-17.5nC @ 10V-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZXMN3A06DN8TA MOSFET Dl 30V N-Chnl UMOS
ZXMN3A06DN8TC MOSFET 2N-CH 30V 4.9A 8SOIC
ZXMN3A06DN8TA-CUT TAPE New and Original
ZXMN3A06DN8TA Darlington Transistors MOSFET Dl 30V N-Chnl UMOS
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