ZXMN3B04N

ZXMN3B04N8TA vs ZXMN3B04N vs ZXMN3B04N8

 
PartNumberZXMN3B04N8TAZXMN3B04NZXMN3B04N8
DescriptionMOSFET 30V N-Chnl UMOS
ManufacturerDiodes IncorporatedZETEX-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current8.9 A--
Rds On Drain Source Resistance25 mOhms--
Vgs Gate Source Voltage12 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation3 W--
ConfigurationSingleSingle Quad Drain Triple Source-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.5 mm--
Length5 mm--
SeriesZXMN3B04ZXMN3B04-
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFET--
Width4 mm--
BrandDiodes Incorporated--
Fall Time16.6 ns16.6 ns-
Product TypeMOSFET--
Rise Time11.5 ns11.5 ns-
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns40 ns-
Typical Turn On Delay Time9 ns9 ns-
Unit Weight0.002610 oz0.002610 oz-
Package Case-SOIC-8-
Pd Power Dissipation-3 W-
Vgs Gate Source Voltage-12 V-
Id Continuous Drain Current-8.9 A-
Vds Drain Source Breakdown Voltage-30 V-
Rds On Drain Source Resistance-25 mOhms-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
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