PartNumber | ZXMN3B04N8TA | ZXMN3B04N | ZXMN3B04N8 |
Description | MOSFET 30V N-Chnl UMOS | ||
Manufacturer | Diodes Incorporated | ZETEX | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SO-8 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 8.9 A | - | - |
Rds On Drain Source Resistance | 25 mOhms | - | - |
Vgs Gate Source Voltage | 12 V | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 3 W | - | - |
Configuration | Single | Single Quad Drain Triple Source | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Height | 1.5 mm | - | - |
Length | 5 mm | - | - |
Series | ZXMN3B04 | ZXMN3B04 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Type | MOSFET | - | - |
Width | 4 mm | - | - |
Brand | Diodes Incorporated | - | - |
Fall Time | 16.6 ns | 16.6 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 11.5 ns | 11.5 ns | - |
Factory Pack Quantity | 500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 40 ns | 40 ns | - |
Typical Turn On Delay Time | 9 ns | 9 ns | - |
Unit Weight | 0.002610 oz | 0.002610 oz | - |
Package Case | - | SOIC-8 | - |
Pd Power Dissipation | - | 3 W | - |
Vgs Gate Source Voltage | - | 12 V | - |
Id Continuous Drain Current | - | 8.9 A | - |
Vds Drain Source Breakdown Voltage | - | 30 V | - |
Rds On Drain Source Resistance | - | 25 mOhms | - |