ZXMN3F

ZXMN3F30FGTA vs ZXMN3F30FHTA-CUT TAPE vs ZXMN3F30FHTA

 
PartNumberZXMN3F30FGTAZXMN3F30FHTA-CUT TAPEZXMN3F30FHTA
DescriptionDIIZXMN3F30FGTA (Alt: ZXMN3F30FGTA)IGBT Transistors MOSFET 30V N-Channel Enhance. Mode MOSFET
Manufacturer--Diodes Incorporated
Product Category--FETs - Single
Series--ZXMN2F30
Packaging--Digi-ReelR Alternate Packaging
Unit Weight--0.000282 oz
Mounting Style--SMD/SMT
Package Case--TO-236-3, SC-59, SOT-23-3
Technology--Si
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Number of Channels--1 Channel
Supplier Device Package--SOT-23-3
Configuration--Single
FET Type--MOSFET N-Channel, Metal Oxide
Power Max--950mW
Transistor Type--1 N-Channel
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--318pF @ 15V
FET Feature--Logic Level Gate, 4.5V Drive
Current Continuous Drain Id 25°C--3.8A (Ta)
Rds On Max Id Vgs--47 mOhm @ 3.2A, 10V
Vgs th Max Id--3V @ 250μA
Gate Charge Qg Vgs--7.7nC @ 10V
Pd Power Dissipation--1.4 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--2.6 ns
Rise Time--2.6 ns
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--4.6 A
Vds Drain Source Breakdown Voltage--30 V
Rds On Drain Source Resistance--47 mOhms
Transistor Polarity--N-Channel
Typical Turn Off Delay Time--17 ns
Typical Turn On Delay Time--1.6 ns
Channel Mode--Enhancement
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZXMN3F31DN8TA MOSFET 30V Dual N-channel Enhance. Mode MOSFET
ZXMN3F30FGTA DIIZXMN3F30FGTA (Alt: ZXMN3F30FGTA)
ZXMN3F318DN8TA New and Original
ZXMN3F31DN8TC New and Original
ZXMN3F30FHTA-CUT TAPE New and Original
ZXMN3F31DN8TA IGBT Transistors MOSFET 30V Dual N-channel Enhance. Mode MOSFET
ZXMN3F30FHTA IGBT Transistors MOSFET 30V N-Channel Enhance. Mode MOSFET
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