PartNumber | ZXMN3F30FGTA | ZXMN3F30FHTA-CUT TAPE | ZXMN3F30FHTA |
Description | DIIZXMN3F30FGTA (Alt: ZXMN3F30FGTA) | IGBT Transistors MOSFET 30V N-Channel Enhance. Mode MOSFET | |
Manufacturer | - | - | Diodes Incorporated |
Product Category | - | - | FETs - Single |
Series | - | - | ZXMN2F30 |
Packaging | - | - | Digi-ReelR Alternate Packaging |
Unit Weight | - | - | 0.000282 oz |
Mounting Style | - | - | SMD/SMT |
Package Case | - | - | TO-236-3, SC-59, SOT-23-3 |
Technology | - | - | Si |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Number of Channels | - | - | 1 Channel |
Supplier Device Package | - | - | SOT-23-3 |
Configuration | - | - | Single |
FET Type | - | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | - | 950mW |
Transistor Type | - | - | 1 N-Channel |
Drain to Source Voltage Vdss | - | - | 30V |
Input Capacitance Ciss Vds | - | - | 318pF @ 15V |
FET Feature | - | - | Logic Level Gate, 4.5V Drive |
Current Continuous Drain Id 25°C | - | - | 3.8A (Ta) |
Rds On Max Id Vgs | - | - | 47 mOhm @ 3.2A, 10V |
Vgs th Max Id | - | - | 3V @ 250μA |
Gate Charge Qg Vgs | - | - | 7.7nC @ 10V |
Pd Power Dissipation | - | - | 1.4 W |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 2.6 ns |
Rise Time | - | - | 2.6 ns |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 4.6 A |
Vds Drain Source Breakdown Voltage | - | - | 30 V |
Rds On Drain Source Resistance | - | - | 47 mOhms |
Transistor Polarity | - | - | N-Channel |
Typical Turn Off Delay Time | - | - | 17 ns |
Typical Turn On Delay Time | - | - | 1.6 ns |
Channel Mode | - | - | Enhancement |