ZXMN4

ZXMN4A06G vs ZXMN4A06GQ vs ZXMN4A06GQTA

 
PartNumberZXMN4A06GZXMN4A06GQZXMN4A06GQTA
DescriptionMOSFET BVDSS: 31V40V SOT223 T&R 1K
ManufacturerDiodes Incorporated--
Product CategoryFETs - Single--
SeriesZXMN4A--
PackagingCut Tape (CT) Alternate Packaging--
Unit Weight0.000282 oz--
Mounting StyleSMD/SMT--
Package CaseTO-261-4, TO-261AA--
TechnologySi--
Operating Temperature-55°C ~ 150°C (TJ)--
Mounting TypeSurface Mount--
Number of Channels1 Channel--
Supplier Device PackageSOT-223--
ConfigurationSingle Dual Drain--
FET TypeMOSFET N-Channel, Metal Oxide--
Power Max2W--
Transistor Type1 N-Channel--
Drain to Source Voltage Vdss40V--
Input Capacitance Ciss Vds770pF @ 40V--
FET FeatureStandard--
Current Continuous Drain Id 25°C5A (Ta)--
Rds On Max Id Vgs50 mOhm @ 4.5A, 10V--
Vgs th Max Id1V @ 250μA--
Gate Charge Qg Vgs18.2nC @ 10V--
Pd Power Dissipation3.9 W--
Maximum Operating Temperature+ 150 C--
Minimum Operating Temperature- 55 C--
Fall Time7.35 ns--
Rise Time4.45 ns--
Vgs Gate Source Voltage20 V--
Id Continuous Drain Current7 A--
Vds Drain Source Breakdown Voltage40 V--
Rds On Drain Source Resistance75 mOhms--
Transistor PolarityN-Channel--
Typical Turn Off Delay Time28.61 ns--
Typical Turn On Delay Time2.55 ns--
Channel ModeEnhancement--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZXMN4A06GTA MOSFET 40V N-Chnl UMOS
ZXMN4A06KTC MOSFET 40V 10.9A N-CHANNEL MOSFET
ZXMN4A06G New and Original
ZXMN4A06GQ New and Original
ZXMN4A06GQTA MOSFET BVDSS: 31V40V SOT223 T&R 1K
ZXMN4A06GTA-CUT TAPE New and Original
ZXMN4A06KTC IGBT Transistors MOSFET 40V 10.9A N-CHANNEL MOSFET
ZXMN4A06GTA IGBT Transistors MOSFET 40V N-Chnl UMOS
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