ZXMN6A08E

ZXMN6A08E6TA vs ZXMN6A08E6QTA vs ZXMN6A08E6 , LN2117B025M

 
PartNumberZXMN6A08E6TAZXMN6A08E6QTAZXMN6A08E6 , LN2117B025M
DescriptionMOSFET 60V N-Chnl UMOSMOSFET 60V N-Ch Enh FET 20Vgs 80mOhm
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-26-6SOT-26-6-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current3.5 A2.5 A-
Rds On Drain Source Resistance80 mOhms150 mOhms-
Vgs th Gate Source Threshold Voltage1 V1 V-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge5.8 nC5.8 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.1 W8.8 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.3 mm--
Length3.1 mm--
ProductMOSFET Small Signal--
SeriesZXMN6A0ZXMN6-
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFET--
Width1.8 mm--
BrandDiodes IncorporatedDiodes Incorporated-
Forward Transconductance Min6.6 S6.6 S-
Fall Time4.6 ns4.6 ns-
Product TypeMOSFETMOSFET-
Rise Time2.1 ns2.1 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time12.3 ns12.3 ns-
Typical Turn On Delay Time2.6 ns2.6 ns-
Unit Weight0.000282 oz--
Qualification-AEC-Q101-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZXMN6A08E6TA MOSFET 60V N-Chnl UMOS
ZXMN6A08E6QTA MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm
ZXMN6A08E6TC MOSFET 60V N-Chnl UMOS
ZXMN6A08E6 , LN2117B025M New and Original
ZXMN6A08E6QTA MOSFET 60V N-CH ENH FET 20VGS 80MOHM MOSFET N-CH 60V 2.8A SOT23-6
ZXMN6A08E6TA MOSFET N-CH 60V 2.8A SOT23-6
ZXMN6A08E6TA(6A8) New and Original
ZXMN6A08E6TA-CUT TAPE New and Original
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