 |  | | |
| PartNumber | ZXMN6A09DN8TA | ZXMN6A09DN8 | ZXMN6A09DN8TA-CUT TAPE |
| Description | MOSFET Dl 60V N-Chnl UMOS | ||
| Manufacturer | Diodes Incorporated | Zetex | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 5.1 A | - | - |
| Rds On Drain Source Resistance | 40 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.1 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.5 mm | - | - |
| Length | 5 mm | - | - |
| Series | ZXMN6A | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 4.6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25.3 ns | - | - |
| Typical Turn On Delay Time | 4.9 ns | - | - |
| Unit Weight | 0.002610 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXMN6A09DN8TA | MOSFET Dl 60V N-Chnl UMOS | |
| ZXMN6A09DN8TC | MOSFET 60V N-Chan | ||
| ZXMN6A09DN8 | New and Original | ||
| ZXMN6A09DN8TA-CUT TAPE | New and Original | ||
| ZXMN6A09DN8TA | IGBT Transistors MOSFET Dl 60V N-Chnl UMOS |