 | |  | |
| PartNumber | ZXMN6A09KTC | ZXMN6A09KQTC | ZXMN6A09K |
| Description | MOSFET MOSFET N-CH 60V | MOSFET MOSFETBVDSS: 41V-60V | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 11.2 A | 11.8 A | - |
| Rds On Drain Source Resistance | 40 mOhms | 40 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 10.1 W | 10.1 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 2.39 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | ZXMN6A | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | MOSFET | - | - |
| Width | 6.22 mm | - | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 14.5 ns | 14.5 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 4.6 ns | 4.6 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 32.5 ns | 32.5 ns | - |
| Typical Turn On Delay Time | 4.8 ns | 4.8 ns | - |
| Unit Weight | 0.139332 oz | 0.011640 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 1 V | - |
| Qg Gate Charge | - | 29 nC | - |
| Qualification | - | AEC-Q101 | - |
| Forward Transconductance Min | - | 15 S | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXMN6A09KTC | MOSFET MOSFET N-CH 60V | |
| ZXMN6A09KQTC | MOSFET MOSFETBVDSS: 41V-60V | ||
| ZXMN6A09K | New and Original | ||
| ZXMN6A09KTC | IGBT Transistors MOSFET MOSFET N-CH 60V |