PartNumber | ZXMP10A17GQTC | ZXMP10A17E6TA | ZXMP10A17GQTA |
Description | MOSFET MOSFET BVDSS: 61V-100V | MOSFET 100V P-Chanl UMOS | MOSFET MOSFET BVDSS |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-223-3 | SOT-26-6 | SOT-223-3 |
Qualification | AEC-Q101 | - | AEC-Q101 |
Packaging | Reel | Reel | Reel |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 4000 | 3000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.009171 oz | 0.000529 oz | 0.003951 oz |
RoHS | - | Y | Y |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | - | 100 V | 100 V |
Id Continuous Drain Current | - | 1.6 A | 2.4 A |
Rds On Drain Source Resistance | - | 350 mOhms | 450 mOhms |
Vgs th Gate Source Threshold Voltage | - | 2 V | 4 V |
Vgs Gate Source Voltage | - | 10 V | 20 V |
Qg Gate Charge | - | 10.7 nC | 10.7 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 1.7 W | 3.9 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 1.3 mm | - |
Length | - | 3.1 mm | - |
Series | - | ZXMP10A | ZXMP10A |
Transistor Type | - | 1 P-Channel | 1 P-Channel |
Width | - | 1.8 mm | - |
Forward Transconductance Min | - | 2.8 S | 2.8 S |
Fall Time | - | 7.2 ns | 7.2 ns |
Rise Time | - | 3.5 ns | 3.5 ns |
Typical Turn Off Delay Time | - | 13.4 ns | 13.4 ns |
Typical Turn On Delay Time | - | 3 ns | 3 ns |