PartNumber | ZXMP6A13FQTA | ZXMP6A13F | ZXMP6A13FQTA-CUT TAPE |
Description | MOSFET 60V P-Ch Enh Fet 20Vgs 625pD 219pF | ||
Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-23-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 1.1 A | - | - |
Rds On Drain Source Resistance | 400 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 2.9 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 806 mW | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Series | ZXMP6 | ZXMP6 | - |
Transistor Type | 1 P-Channel | - | - |
Brand | Diodes Incorporated | - | - |
Forward Transconductance Min | 1.8 S | - | - |
Fall Time | 5.7 ns | 5.7 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 2.2 ns | 2.2 ns | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 11.2 ns | 11.2 ns | - |
Typical Turn On Delay Time | 1.6 ns | 1.6 ns | - |
Unit Weight | 0.000282 oz | - | - |
Package Case | - | TO-236-3, SC-59, SOT-23-3 | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | SOT-23 | - |
FET Type | - | MOSFET P-Channel, Metal Oxide | - |
Power Max | - | 625mW | - |
Drain to Source Voltage Vdss | - | 60V | - |
Input Capacitance Ciss Vds | - | 219pF @ 30V | - |
FET Feature | - | Standard | - |
Current Continuous Drain Id 25°C | - | 900mA (Ta) | - |
Rds On Max Id Vgs | - | 400 mOhm @ 900mA, 10V | - |
Vgs th Max Id | - | 3V @ 250μA | - |
Gate Charge Qg Vgs | - | 2.9nC @ 4.5V | - |
Pd Power Dissipation | - | 806 mW | - |
Vgs Gate Source Voltage | - | +/- 20 V | - |
Id Continuous Drain Current | - | - 1.1 A | - |
Vds Drain Source Breakdown Voltage | - | - 60 V | - |
Vgs th Gate Source Threshold Voltage | - | - 3 V | - |
Rds On Drain Source Resistance | - | 400 mOhms | - |
Qg Gate Charge | - | 2.9 nC | - |
Forward Transconductance Min | - | 1.8 S | - |