 |  | | |
| PartNumber | ZXMP6A17E6QTA | ZXMP6A17E6 | ZXMP6A17E6Q |
| Description | MOSFET 60V P-Ch Enh Mode 1.1W 3A 637pF 17.7nC | Trans MOSFET P-CH 60V 3A 6-Pin SOT-26 T/R - Tape and Reel (Alt: ZXMP6A17E6Q) | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-26-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 3 A | - | - |
| Rds On Drain Source Resistance | 120 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 17.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.92 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | - |
| Series | ZXMN6 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 4.7 S | - | - |
| Fall Time | 11.3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 3.4 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 26.2 ns | - | - |
| Typical Turn On Delay Time | 2.6 ns | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXMP6A17E6TA | MOSFET P-Ch 60 Volt 3.0A | |
| ZXMP6A17E6QTA | MOSFET 60V P-Ch Enh Mode 1.1W 3A 637pF 17.7nC | ||
| ZXMP6A17E6 | New and Original | ||
| ZXMP6A17E6Q | Trans MOSFET P-CH 60V 3A 6-Pin SOT-26 T/R - Tape and Reel (Alt: ZXMP6A17E6Q) | ||
| ZXMP6A17E6TADIODES | New and Original | ||
| ZXMP6A17E6TA-CUT TAPE | New and Original | ||
| ZXMP6A17E6TA | IGBT Transistors MOSFET P-Ch 60 Volt 3.0A | ||
| ZXMP6A17E6QTA | IGBT Transistors MOSFET 60V P-Ch Enh Mode 1.1W 3A 637pF 17.7nC |