PartNumber | ZXMS6005DGTA | ZXMS6005DN8-13 | ZXMS6005DGQ-13 |
Description | MOSFET 60V N-Ch Intellifet 200mohm 2A 490mJ | MOSFET Low Side IntelliFET | MOSFET Low Side IntelliFET |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-223-3 | SO-8 | SOT-223-3 |
Number of Channels | 1 Channel | 2 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
Id Continuous Drain Current | 2 A | 1.8 A | 2 A |
Rds On Drain Source Resistance | 200 mOhms | 150 mOhms | 200 mOhms |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 125 C | + 125 C | + 125 C |
Pd Power Dissipation | 3 W | 1.67 W | 3 W |
Configuration | Single | Dual | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | IntelliFET | - | - |
Packaging | Reel | Reel | Reel |
Product | MOSFET Small Signal | - | - |
Series | ZXMS600 | - | - |
Transistor Type | 1 N-Channel | 2 N-Channel | 1 N-Channel |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Fall Time | 19 us | 19 us, 19 us | 19 us |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 14 us | 14 us, 14 us | 14 us |
Factory Pack Quantity | 1000 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 34 us | 34 us, 34 us | 34 us |
Typical Turn On Delay Time | 6 us | 6 us, 6 us | 6 us |
Unit Weight | 0.003951 oz | 0.002610 oz | - |
Vgs th Gate Source Threshold Voltage | - | 700 mV | 0.7 V |
Vgs Gate Source Voltage | - | 5 V | - |
Qg Gate Charge | - | - | - |
Qualification | - | - | AEC-Q101 |