PartNumber | ZXTN2010ZQTA | ZXTN2010ZTA | ZXTN2010GTA |
Description | Bipolar Transistors - BJT Pwr Low Sat Transistor | Bipolar Transistors - BJT 60V NPN Med Power | Bipolar Transistors - BJT 60V NPN Low Sat |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
Technology | Si | - | - |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 80 V | 60 V | 60 V |
Collector Base Voltage VCBO | 190 V | 150 V | 150 V |
Emitter Base Voltage VEBO | 8.1 V | 7 V | 7 V |
Collector Emitter Saturation Voltage | 230 mV | - | - |
Maximum DC Collector Current | 20 A | 5 A | 6 A |
Gain Bandwidth Product fT | 130 MHz | 130 MHz | 130 MHz |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | ZXTN2010 | ZXTN2010 | ZXTN2010 |
DC Current Gain hFE Max | 300 | - | - |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Continuous Collector Current | 5 A | 5 A | 6 A |
Pd Power Dissipation | 1.5 W | 2100 mW | 3 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | - | - |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | Transistors | Transistors | Transistors |
RoHS | - | Y | Y |
Package / Case | - | SOT-89-3 | SOT-223-4 |
Height | - | 1.6 mm | 1.65 mm |
Length | - | 4.6 mm | 6.7 mm |
Packaging | - | Reel | Reel |
Width | - | 2.6 mm | 3.7 mm |
Unit Weight | - | 0.001834 oz | 0.003951 oz |