ZXTD4

ZXTD4591AM832TA vs ZXTD414E5BTA vs ZXTD4591AM832

 
PartNumberZXTD4591AM832TAZXTD414E5BTAZXTD4591AM832
DescriptionBipolar Transistors - BJT 40V PNP 3x2 MLP
ManufacturerDiodes Incorporated-Diodes Incorporated
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Arrays
RoHST--
Mounting StyleSMD/SMT--
Package / CaseMLP-832-8--
Transistor PolarityNPN, PNP--
ConfigurationDual--
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO40 V--
Emitter Base Voltage VEBO- 5 V--
Maximum DC Collector Current2 A, 1.5 A--
Gain Bandwidth Product fT150 MHz--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max300--
Height1 mm--
Length3 mm--
PackagingReel-Digi-ReelR
Width2 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min300 at 1 mA, 5 V at NPN, 300 at 500 mA, 5 V at NPN, 200 at 1 A, 5 V at NPN, 35 at 2 A, 5 V at NPN, 300 at 1 mA, 5 V at PNP, 300 at 100 mA, 5 V at PNP, 250 at 500 mA, 5 V at PNP, 160 at 1 A, 5 V at PNP, 30 at 2 A, 5 V at PNP--
Pd Power Dissipation3000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Series---
Package Case--8-VDFN Exposed Pad
Mounting Type--Surface Mount
Supplier Device Package--8-MLP (3x2)
Power Max--1W
Transistor Type--NPN, PNP
Current Collector Ic Max--2A, 1.5A
Voltage Collector Emitter Breakdown Max--40V
DC Current Gain hFE Min Ic Vce--300 @ 500mA, 5V / 300 @ 100mA, 5V
Vce Saturation Max Ib Ic--500mV @ 100mA, 1A
Current Collector Cutoff Max--100nA
Frequency Transition--150MHz
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZXTD4591E6TA Bipolar Transistors - BJT Dual 60V NPN/PNP
ZXTD4591AM832TA Bipolar Transistors - BJT 40V PNP 3x2 MLP
ZXTD414E5BTA New and Original
ZXTD4591AM832 New and Original
ZXTD4591AM832TA TRANS NPN/PNP 40V 2A/1.5A 8MLP
ZXTD4591E6TC TRANS NPN/PNP 60V 1A SOT23-6
ZXTD4591E6TA TRANS NPN/PNP 60V 1A SOT23-6
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