| PartNumber | ZXTN25100DGQTA | ZXTN25100DFHTA | ZXTN25100BFHTA |
| Description | Bipolar Transistors - BJT 100V NPN High Gain 180V 85mOhm | Bipolar Transistors - BJT NPN 100V HIGH GAIN | Bipolar Transistors - BJT NPN Medium Power |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-223-4 | SOT-23-3 | SOT-23-3 |
| Transistor Polarity | NPN | NPN | NPN |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 100 V | 100 V | 100 V |
| Collector Base Voltage VCBO | 180 V | 180 V | 170 V |
| Emitter Base Voltage VEBO | 7 V | 7 V | 7 V |
| Collector Emitter Saturation Voltage | 120 mV | - | - |
| Maximum DC Collector Current | 3 A | 2.5 A | 3 A |
| Gain Bandwidth Product fT | 175 MHz | 175 MHz | 160 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | ZXTN25100 | ZXTN25100 | ZXTN25100 |
| DC Current Gain hFE Max | 900 at 10 mA, 2 V | 300 at 10 mA, 2 V | - |
| Packaging | Reel | Reel | Reel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| DC Collector/Base Gain hfe Min | 300 at 10 mA, 2 V | 120 | - |
| Pd Power Dissipation | 1.2 W | 1810 mW | 1810 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 1000 | 3000 | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Height | - | 1 mm | 1 mm |
| Length | - | 3.05 mm | 3.05 mm |
| Width | - | 1.4 mm | 1.4 mm |
| Unit Weight | - | 0.000282 oz | 0.000282 oz |