ZXTP2025

ZXTP2025FTA vs ZXTP2025F vs ZXTP2025FTA-CUT TAPE

 
PartNumberZXTP2025FTAZXTP2025FZXTP2025FTA-CUT TAPE
DescriptionBipolar Transistors - BJT PNP 50V 5A 3-PIN
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO7 V--
Maximum DC Collector Current5 A5 A-
Gain Bandwidth Product fT190 MHz190 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesZXTP2025ZXTP2025-
DC Current Gain hFE Max180 at 10 mA, 2 V180 at 10 mA at 2 V-
Height1 mm--
Length3.05 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.4 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min180 at 10 mA, 2 V, 200 at 500 mA, 2 V, 70 at 5 A, 2 V, 12 at 10 A, 2 V--
Pd Power Dissipation1560 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz0.000282 oz-
Package Case-TO-236-3, SC-59, SOT-23-3-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-23-3-
Power Max-1.2W-
Transistor Type-PNP-
Current Collector Ic Max-5A-
Voltage Collector Emitter Breakdown Max-50V-
DC Current Gain hFE Min Ic Vce-200 @ 500mA, 2V-
Vce Saturation Max Ib Ic-200mV @ 500mA, 5A-
Current Collector Cutoff Max-20nA (ICBO)-
Frequency Transition-190MHz-
Pd Power Dissipation-1560 mW-
Collector Emitter Voltage VCEO Max-50 V-
Collector Base Voltage VCBO-50 V-
Emitter Base Voltage VEBO-7 V-
DC Collector Base Gain hfe Min-180 at 10 mA at 2 V 200 at 500 mA at 2 V 70 at 5 A at 2 V 12 at 10 A at 2 V-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZXTP2025FTA Bipolar Transistors - BJT PNP 50V 5A 3-PIN
ZXTP2025F New and Original
ZXTP2025FTA-CUT TAPE New and Original
ZXTP2025FTA Bipolar Transistors - BJT PNP 50V 5A 3-PIN
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