PartNumber | ISP25DP06LMSATMA1 | ISP25DP06NMXTSA1 | ISP25DP06LMXTSA1 |
Description | MOSFET | MOSFET SMALL SIGNAL MOSFETS | MOSFET SMALL SIGNAL MOSFETS |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Packaging | Reel | Reel | Reel |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | ISP25DP06LMS SP004987240 | ISP25DP06NM SP004987272 | ISP25DP06LM SP004987270 |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | SOT-223-4 | SOT-223-4 |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | - | - 60 V | - 60 V |
Id Continuous Drain Current | - | - 1.9 A | - 1.9 A |
Rds On Drain Source Resistance | - | 250 mOhms | 250 mOhms |
Vgs th Gate Source Threshold Voltage | - | - 4 V | - 2 V |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Qg Gate Charge | - | - 10.8 nC | - 13.9 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 4.2 W | 5 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Series | - | ISP06P005 | ISP06P005 |
Transistor Type | - | 1 P-Channel | 1 P-Channel |
Forward Transconductance Min | - | 3.1 S | 4.4 S |
Fall Time | - | 5 ns | 3 ns |
Rise Time | - | 7 ns | 6 ns |
Typical Turn Off Delay Time | - | 15 ns | 23 ns |
Typical Turn On Delay Time | - | 5 ns | 3 ns |