FDAF59N30

FDAF59N30
Mfr. #:
FDAF59N30
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 300V 34A NCH MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
FDAF59N30 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-3PN-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
300 V
Id - Continuous Drain Current:
34 A
Rds On - Drain-Source Resistance:
56 mOhms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
161 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
20.1 mm
Length:
16.2 mm
Transistor Type:
1 N-Channel
Type:
Power MOSFET
Width:
5 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
52 S
Fall Time:
200 ns
Product Type:
MOSFET
Rise Time:
575 ns
Factory Pack Quantity:
30
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
120 ns
Typical Turn-On Delay Time:
140 ns
Unit Weight:
0.000194 oz
Tags
FDAF, FDA
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
MOSFETs 300V,34A, NCH MOSFET
***i-Key
MOSFET N-CH 300V 34A TO-3PF
***ark
MOSFET, N, TO-3PF; Transistor type:Enhancement; Voltage, Vds typ:300V; Current, Id cont:34A; Resistance, Rds on:0.056ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:TO-3PF; Current, Idm pulse:136A; Pins, RoHS Compliant: Yes
***nell
MOSFET, N, TO-3PF; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:300V; Current, Id Cont:34A; Resistance, Rds On:0.056ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-3PF; Termination Type:Through Hole; Current, Idm Pulse:136A; Pins, No. of:3; Power Dissipation:161W; Voltage, Vds Max:300V; Voltage, Vgs th Max:5V
Part # Mfg. Description Stock Price
FDAF59N30
DISTI # FDAF59N30-ND
ON SemiconductorMOSFET N-CH 300V 34A TO-3PF
RoHS: Compliant
Min Qty: 360
Container: Tube
Limited Supply - Call
    FDAF59N30
    DISTI # 512-FDAF59N30
    ON SemiconductorMOSFET 300V 34A NCH MOSFET
    RoHS: Compliant
    0
      FDAF59N30Fairchild Semiconductor CorporationPower Field-Effect Transistor, 34A I(D), 300V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant
      3257
      • 1000:$2.4200
      • 500:$2.5500
      • 100:$2.6500
      • 25:$2.7700
      • 1:$2.9800
      FDAF59N30Fairchild Semiconductor CorporationPower Field-Effect Transistor, 34A I(D), 300V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant
      Europe - 480
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        Availability
        Stock:
        Available
        On Order:
        5000
        Enter Quantity:
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