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FGL35N120FTDTU

FGL35N120FTDTU
Mfr. #:
FGL35N120FTDTU
Manufacturer:
ON Semiconductor / Fairchild
Description:
IGBT Transistors 1200V 35A Trench IGBT
Lifecycle:
New from this manufacturer.
Datasheet:
FGL35N120FTDTU Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FGL35N120FTDTU more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Series:
FGL35N120FTD
Packaging:
Tube
Brand:
ON Semiconductor / Fairchild
Product Type:
IGBT Transistors
Factory Pack Quantity:
375
Subcategory:
IGBTs
Unit Weight:
0.238311 oz
Tags
FGL35N120FTDT, FGL35N120F, FGL3, FGL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 1200V 70A 368000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
FGL35N120FTD Series 1200 V 35 A Field Stop Trench IGBT - TO-264 3L
***rchild Semiconductor
Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder applications.
***ical
Trans IGBT Chip N-CH 1200V 64A 500000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
FGL40N120AND Series 1200 V 64 A Flange Mount NPT IGBT - TO-264
***nell
IGBT,N CH,FAST,W/DIO,1200V,64A,TO264; Transistor Type: IGBT; DC Collector Current: 64A; Collector Emitter Voltage Vces: 1.2kV; Power Dissipation Pd: 500W; Collector Emitter Voltage V(br); Available until stocks are exhausted
***rchild Semiconductor
Employing NPT technology, Fairchild's AN series of IGBT provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
***ical
Trans IGBT Chip N=-CH 1200V 64A 500000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
FGL40N120AN Series 1200 V 64 A Flange Mount NPT IGBT - TO-264
***ark
Transistor; Transistor Type:IGBT; DC Collector Current:64A; Collector Emitter Voltage, Vces:1.2kV; Power Dissipation, Pd:500W; Collector Emitter Voltage, V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; No. of Pins:3 ;RoHS Compliant: No
***th Star Micro
Employing NPT technology, Fairchild's AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
***ment14 APAC
IGBT, NPT TO-264; Transistor Type:IGBT; DC Collector Current:64A; Collector Emitter Voltage Vces:3.2V; Power Dissipation Pd:500mW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-264; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:64A; Package / Case:TO-264; Power Dissipation Max:500W; Power Dissipation Pd:500mW; Pulsed Current Icm:160A; Rise Time:20ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ark
Transistor,igbt,n-Chan+Diode,1Kv V(Br)Ces,42A I(C),to-264 Rohs Compliant: Yes
***ure Electronics
FGL60N100BNTD Series 1000 V 60 A Through Hole NPT Trench IGBT - TO-264
***rchild Semiconductor
Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.
***ical
Trans IGBT Chip N=-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-264 Rail
***ource
Discrete, Short Circuit Rated IGBT with Diode; Package: TO-264; No of Pins: 3; Container: Rail
***ure Electronics
SGL50N60RUFD Series 600 V 80 A Flange Mount Short Circuit Rated IGBT -TO-264
***ment14 APAC
SINGLE IGBT, 600V, 80A; Transistor Type:; SINGLE IGBT, 600V, 80A; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
*** Source Electronics
IGBT 1000V 60A 180W TO264 / Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube
***ure Electronics
FGL60N100 Series 1000 V 60 A Through Hole NPT Trench IGBT - TO-264-3L
***ark
TRANSISTOR,IGBT,N-CHAN+DIODE,1kV V(BR)CES,60A I(C),TO-264
***rchild Semiconductor
Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.
***nell
IGBT, NPT, TO-264; Transistor Type:IGBT; Transistor Polarity:NPN; Voltage, Vces:1000V; Current Ic Continuous a Max:60A; Voltage, Vce Sat Max:2.9V; Power Dissipation:180W; Case Style:TO-264; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:1000V; Current Ic @ Vce Sat:60A; Current, Icm Pulsed:120A; Power, Pd:180W; Time, Rise:320ns
***th Star Micro
Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( I-H ) applications Product Highlights: High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode
***ark
Igbt Single Transistor, 160 A, 2.6 V, 250 W, 600 V, To-264, 3 Rohs Compliant: Yes
***ource
Discrete, High Performance IGBT with Diode; Package: TO-264; No of Pins: 3; Container: Rail
***ical
Trans IGBT Chip N=-CH 600V 160A 250000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
SGL160N60UFD Series 600 V 160 A Flange Mount Ultra-Fast IGBT -TO-264
***nell
IGBT, ULTRAFAST, 600V, 160A, TO-264; DC Collector Current: 160A; Collector Emitter Saturation Voltage Vce(on): 2.6V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT
***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Part # Mfg. Description Stock Price
FGL35N120FTDTU
DISTI # V36:1790_06359532		ON SemiconductorN-CH / 35A 1200V FS TRENCH IGB0
    FGL35N120FTDTU
    DISTI # FGL35N120FTDTU-ND    		ON SemiconductorIGBT 1200V 70A 368W TO264
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		345In Stock
    • 1125:$6.0300
    • 750:$6.8700
    • 375:$7.5000
    • 10:$9.3900
    • 1:$10.3600
    FGL35N120FTDTU
    DISTI # 26733911    		ON SemiconductorN-CH / 35A 1200V FS TRENCH IGB2250
    • 1000:$5.0760
    • 500:$5.2700
    • 375:$5.7800
    FGL35N120FTDTU
    DISTI # FGL35N120FTDTU    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 70A 3-Pin(3+Tab) TO-264 Rail (Alt: FGL35N120FTDTU)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€6.3900
    • 10:€5.8900
    • 25:€5.5900
    • 50:€5.3900
    • 100:€5.1900
    • 500:€4.9900
    • 1000:€4.6900
    FGL35N120FTDTU
    DISTI # FGL35N120FTDTU    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 70A 3-Pin(3+Tab) TO-264 Rail - Bulk (Alt: FGL35N120FTDTU)
    RoHS: Not Compliant
    Min Qty: 57
    Container: Bulk    		Americas - 0
    • 57:$5.9900
    • 59:$5.8900
    • 116:$5.7900
    • 285:$5.7900
    • 570:$5.5900
    FGL35N120FTDTU
    DISTI # FGL35N120FTDTU    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 70A 3-Pin(3+Tab) TO-264 Rail - Rail/Tube (Alt: FGL35N120FTDTU)
    RoHS: Compliant
    Min Qty: 375
    Container: Tube    		Americas - 0
    • 375:$5.1900
    • 750:$5.0900
    • 1500:$5.0900
    • 2250:$4.9900
    • 3750:$4.8900
    FGL35N120FTDTU
    DISTI # 92R5608    		ON SemiconductorFS1TIGBT TO264 35A 1200V / TUBE0
    • 500:$5.2000
    • 250:$5.3600
    • 100:$6.4000
    • 50:$6.8800
    • 25:$7.3600
    • 10:$8.0800
    • 1:$9.0000
    FGL35N120FTDTU
    DISTI # 512-FGL35N120FTDTU    		ON SemiconductorIGBT Transistors 1200V 35A Trench IGBT
    RoHS: Compliant    		298
    • 1:$9.5100
    • 10:$8.6000
    • 25:$8.2000
    • 100:$7.1200
    • 250:$6.8000
    • 500:$6.2000
    • 1000:$5.4000
    FGL35N120FTDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant    		24847
    • 1000:$5.8400
    • 500:$6.1500
    • 100:$6.4000
    • 25:$6.6800
    • 1:$7.1900
    FGL35N120FTDTU
    DISTI # 8070782P    		ON SemiconductorIGBTFAIRCHILDFGL35N120FTDTU, TU27
    • 10:£6.4500
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    HCNW3120-300E

    Mfr.#: HCNW3120-300E

    OMO.#: OMO-HCNW3120-300E

    		 Logic Output Optocouplers 1Ch 10mA 700mW
    M0541-4-AL

    Mfr.#: M0541-4-AL

    OMO.#: OMO-M0541-4-AL

    		 Standoffs & Spacers 12mm, 4.3 ID, M4 ROUND METRIC SPACER
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    Mfr.#: PX0580/63

    OMO.#: OMO-PX0580-63

    		 AC Power Entry Modules SC MOUNT .25" FASTON
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    OMO.#: OMO-HCNW3120-300E-BROADCOM

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    Availability
    Stock:
    286
    On Order:
    2269
    Enter Quantity:
    Current price of FGL35N120FTDTU is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $9.51
    $9.51
    10
    $8.60
    $86.00
    25
    $8.20
    $205.00
    100
    $7.12
    $712.00
    250
    $6.80
    $1 700.00
    500
    $6.20
    $3 100.00
    1000
    $5.40
    $5 400.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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