NGTG40N120FL2WG

NGTG40N120FL2WG
Mfr. #:
NGTG40N120FL2WG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 1200V/40A FAST IGBT FSII
Lifecycle:
New from this manufacturer.
Datasheet:
NGTG40N120FL2WG Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTG40N120FL2WG DatasheetNGTG40N120FL2WG Datasheet (P4-P6)NGTG40N120FL2WG Datasheet (P7-P9)NGTG40N120FL2WG Datasheet (P10)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Packaging:
Tube
Brand:
ON Semiconductor
Product Type:
IGBT Transistors
Factory Pack Quantity:
30
Subcategory:
IGBTs
Unit Weight:
0.241847 oz
Tags
NGTG, NGT
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans IGBT Chip N-CH 1200V 80A 535000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, 1.2KV, 80A, 175DEG C, 535W;
***r Electronics
Insulated Gate Bipolar Transistor
***ark
Igbt, Single, N Channel, 1.2Kv, 80A, To-247-3; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:2V; Power Dissipation:535W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:175°Crohs Compliant: Yes |Onsemi NGTG40N120FL2WG
***ical
Trans IGBT Chip N-CH 1200V 80A 555000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
FGH40T120SMD Series 1200 V 80 A 555 W FS Trench IGBT -TO247-3
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
***ical
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 468W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
***ical
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 468W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
***icroelectronics
Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
***ical
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 80A, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 468W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pin
***ical
Trans IGBT Chip N=-CH 1200V 80A 882000mW 3-Pin(3+Tab) Power TO-247 T/R
***ark
1200V 40A FS2 Trench IGBT - 3LD, POWER TO247, NON JEDEC, LONG LEAD
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
***p One Stop
Trans IGBT Chip N-CH 1200V 57A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PH50S Series 1200 V 57 A N-Channel Standard Speed IGBT - TO-247AC
***(Formerly Allied Electronics)
Power MOSFET, 1200V DC-1 kHz (Std.) Discrete IGBT TO-247AC | Infineon IRG4PH50SPBF
***ineon SCT
1200V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 1.7 V Current release time: 1000 ns Power dissipation: 200 W
***ment14 APAC
IGBT, 1200V, 57A, TO-247AC; Transistor Type:IGBT; DC Collector Current:57A; Collector Emitter Voltage Vces:1.47V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:57A; Current Temperature:25°C; Device Marking:IRG4PH50S; Fall Time Max:638ns; Full Power Rating Temperature:25°C; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:114A; Rise Time:29ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
Part # Mfg. Description Stock Price
NGTG40N120FL2WG
DISTI # 26621721
ON SemiconductorTrans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
22320
  • 1000:$4.1869
  • 500:$4.3520
  • 250:$4.7770
  • 120:$4.9980
NGTG40N120FL2WG
DISTI # NGTG40N120FL2WG-ND
ON SemiconductorIGBT 1200V 40A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
60In Stock
  • 1020:$4.6777
  • 510:$5.3708
  • 120:$6.1677
  • 30:$7.1033
  • 1:$8.2500
NGTG40N120FL2WG
DISTI # NGTG40N120FL2WG
ON SemiconductorTrans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTG40N120FL2WG)
RoHS: Compliant
Min Qty: 120
Container: Tube
Americas - 0
  • 120:$4.2900
  • 180:$4.1900
  • 300:$4.1900
  • 600:$4.0900
  • 1200:$3.9900
NGTG40N120FL2WG
DISTI # 863-NGTG40N120FL2WG
ON SemiconductorIGBT Transistors 1200V/40A FAST IGBT FSII
RoHS: Compliant
79
  • 1:$7.8500
  • 10:$7.1000
  • 25:$6.7700
  • 100:$5.8800
  • 250:$5.6200
  • 500:$5.1200
  • 1000:$4.4600
NGTG40N120FL2WGON SemiconductorINSTOCK321
    NGTG40N120FL2WGON Semiconductor 280
    • 1:$7.8800
    • 100:$5.9100
    • 500:$5.0700
    • 1000:$4.7300
    Image Part # Description
    UC3907N

    Mfr.#: UC3907N

    OMO.#: OMO-UC3907N

    Power Management Specialized - PMIC LOAD SHARE CONTROLLER
    SZ1.5SMC6.8AT3G

    Mfr.#: SZ1.5SMC6.8AT3G

    OMO.#: OMO-SZ1-5SMC6-8AT3G

    TVS Diodes / ESD Suppressors 6.8V 1.5kW UNI-DIR SZ1.5SMC AEC-Q101
    NGTB30N135IHR1WG

    Mfr.#: NGTB30N135IHR1WG

    OMO.#: OMO-NGTB30N135IHR1WG

    IGBT Transistors 1350V/30A IGBT FSII
    FGH60N60UFDTU

    Mfr.#: FGH60N60UFDTU

    OMO.#: OMO-FGH60N60UFDTU

    IGBT Transistors N-Ch/ 60A 600V FS
    FGL40N120ANDTU

    Mfr.#: FGL40N120ANDTU

    OMO.#: OMO-FGL40N120ANDTU

    IGBT Transistors 1200V NPT IGBT
    HGTG18N120BND

    Mfr.#: HGTG18N120BND

    OMO.#: OMO-HGTG18N120BND

    IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
    FGH40N120ANTU

    Mfr.#: FGH40N120ANTU

    OMO.#: OMO-FGH40N120ANTU

    IGBT Transistors 1200V NPT
    SZ1.5SMC6.8AT3G

    Mfr.#: SZ1.5SMC6.8AT3G

    OMO.#: OMO-SZ1-5SMC6-8AT3G-LITTELFUSE

    TVS Diodes - Transient Voltage Suppressors ZEN SMC TVS 1.5KW 6.8V TR
    HGTG18N120BND

    Mfr.#: HGTG18N120BND

    OMO.#: OMO-HGTG18N120BND-ON-SEMICONDUCTOR

    IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
    FGL40N120ANDTU

    Mfr.#: FGL40N120ANDTU

    OMO.#: OMO-FGL40N120ANDTU-ON-SEMICONDUCTOR

    IGBT Transistors 1200V NPT IGBT
    Availability
    Stock:
    38
    On Order:
    2021
    Enter Quantity:
    Current price of NGTG40N120FL2WG is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $7.85
    $7.85
    10
    $7.10
    $71.00
    25
    $6.77
    $169.25
    100
    $5.88
    $588.00
    250
    $5.62
    $1 405.00
    500
    $5.12
    $2 560.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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