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BSC117N08NS5ATMA1

BSC117N08NS5ATMA1
Mfr. #:
BSC117N08NS5ATMA1
Manufacturer:
Infineon Technologies
Description:
RF Bipolar Transistors MOSFET N-Ch 80V 49A TDSON-8
Lifecycle:
New from this manufacturer.
Datasheet:
BSC117N08NS5ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
BSC117N08NS5ATMA1 more Information
Product Attribute
Attribute Value
Manufacturer
Infineon Technologies
Product Category
Transistors - FETs, MOSFETs - Single
Packaging
Reel
Part-Aliases
BSC117N08NS5 SP001295028
Unit-Weight
0.017870 oz
Mounting-Style
SMD/SMT
Package-Case
TDSON-8
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
50 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
3 ns
Rise-Time
4 ns
Vgs-Gate-Source-Voltage
+/- 20 V
Id-Continuous-Drain-Current
49 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Vgs-th-Gate-Source-Threshold-Voltage
2.2 V
Rds-On-Drain-Source-Resistance
16.3 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
16 ns
Typical-Turn-On-Delay-Time
10 ns
Qg-Gate-Charge
15 nC
Forward-Transconductance-Min
19 S
Channel-Mode
Enhancement
Tags
BSC11, BSC1, BSC
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 80V 49A Automotive 8-Pin TDSON EP T/R
***ark
Mosfet, N-Ch, 80V, 49A, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0096Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Part # Mfg. Description Stock Price
BSC117N08NS5ATMA1
DISTI # BSC117N08NS5ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 80V 49A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.5690
BSC117N08NS5ATMA1
DISTI # BSC117N08NS5ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 80V 49A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.6609
  • 500:$0.8372
  • 100:$1.0795
  • 10:$1.3660
  • 1:$1.5400
BSC117N08NS5ATMA1
DISTI # BSC117N08NS5ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 80V 49A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.6609
  • 500:$0.8372
  • 100:$1.0795
  • 10:$1.3660
  • 1:$1.5400
BSC117N08NS5ATMA1
DISTI # BSC117N08NS5ATMA1		Infineon Technologies AGTrans MOSFET N-CH 80V 19A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC117N08NS5ATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.5599
  • 10000:$0.5399
  • 20000:$0.5199
  • 30000:$0.5029
  • 50000:$0.4939
BSC117N08NS5ATMA1
DISTI # SP001295028		Infineon Technologies AGTrans MOSFET N-CH 80V 19A 8-Pin TDSON T/R (Alt: SP001295028)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€0.8349
  • 10000:€0.6509
  • 20000:€0.5819
  • 30000:€0.5289
  • 50000:€0.4959
BSC117N08NS5ATMA1
DISTI # BSC117N08NS5		Infineon Technologies AGTrans MOSFET N-CH 80V 19A 8-Pin TDSON T/R (Alt: BSC117N08NS5)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC117N08NS5ATMA1
    DISTI # 13AC8340    		Infineon Technologies AGMOSFET, N-CH, 80V, 49A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:49A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0096ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes4245
    • 1000:$0.5840
    • 500:$0.7390
    • 250:$0.7880
    • 100:$0.8370
    • 50:$0.9210
    • 25:$1.0100
    • 10:$1.0900
    • 1:$1.2800
    BSC117N08NS5ATMA1
    DISTI # 726-BSC117N08NS5ATMA    		Infineon Technologies AGMOSFET N-Ch 80V 49A TDSON-8
    RoHS: Compliant    		0
    • 1:$1.2800
    • 10:$1.0900
    • 100:$0.8370
    • 500:$0.7390
    • 1000:$0.5840
    • 5000:$0.5180
    BSC117N08NS5ATMA1
    DISTI # 2725815    		Infineon Technologies AGMOSFET, N-CH, 80V, 49A, TDSON
    RoHS: Compliant    		3995
    • 100:£0.6520
    • 25:£0.8490
    • 5:£0.9400
    BSC117N08NS5ATMA1
    DISTI # 2725815    		Infineon Technologies AGMOSFET, N-CH, 80V, 49A, TDSON
    RoHS: Compliant    		4245
    • 100:$1.7300
    • 10:$2.1800
    • 1:$2.4600
    Image Part # Description
    BSC117N08NS5ATMA1

    Mfr.#: BSC117N08NS5ATMA1

    OMO.#: OMO-BSC117N08NS5ATMA1

    		 MOSFET N-Ch 80V 49A TDSON-8
    BSC117N08NS5

    Mfr.#: BSC117N08NS5

    OMO.#: OMO-BSC117N08NS5-1190

    		 New and Original
    BSC117N08NS5ATMA1

    Mfr.#: BSC117N08NS5ATMA1

    OMO.#: OMO-BSC117N08NS5ATMA1-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET N-Ch 80V 49A TDSON-8
    Availability
    Stock:
    Available
    On Order:
    2000
    Enter Quantity:
    Current price of BSC117N08NS5ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.74
    $0.74
    10
    $0.70
    $7.04
    100
    $0.67
    $66.68
    500
    $0.63
    $314.85
    1000
    $0.59
    $592.70
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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