SEMIX653GB176HDS

Mfr. #:: SEMIX653GB176HDS
Manufacturer:: SEMIKRON
Description:: IGBT POWER MODULE, Transistor Polarity:N Channel, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2.45V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.2V,
Lifecycle:: New from this manufacturer.
Datasheet:: SEMIX653GB176HDS Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

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Tags: SEMIX65, SEMIX6, SEMIX, SEMI, SEM

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Vacuum Packaging with PL

Step2:
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Step3:
Packaging Boxes

SEMIX653GB176HDS Description

***(Formerly Allied Electronics): IGBT, 1700 V, 660 A @ 25 DegC, 650 A @ 80 DegC, 1.7 V @ 25 degC

***ikron: Features: Homogeneous Si Trench = Trenchgate technology V CE(sat) with positive temperature coefficient UL recognised file no. E63532 Typical Applications: AC inverter drives UPS Electronic welders

***ark: IGBT POWER MODULE; Continuous Collector Current:619A; Collector Emitter Saturation Voltage:2.45V; Power Dissipation:-; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2V; Product Range:- RoHS Compliant: Yes

***nell: IGBT MODULE, 2X1700V; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:1700V; Current Ic Continuous a Max:650A; Voltage, Vce Sat Max:2.45V; Case Style:SEMiX 3s; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:1.2V; Current Ic av:650A; Current, Icm Pulsed:900A; Current, Ifs Max:2900A; Time, Rise:90ns; Voltage, Vrrm:1700V

***ical: Trans IGBT Module N-CH 1200V 995A 4050000mW Automotive 11-Pin ECONOD-3 Tray

***ark: Igbt, Module, N-Ch, 1.2Kv, 995A; Transistor Polarity:n Channel; Dc Collector Current:995A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:4.05Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes

***ineon: EconoDUAL3 1200V dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled Diode and NTC | Summary of Features: Low V(CEsat); T(vj op) = 150C; V(CEsat) with positive Temperature Coefficient; High Power Density; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; ups; induction-heating; welding

***ure Electronics: FF150R12RT4 Series 1200 V 150 A 790 W Surface Mount IGBT Module

***ark: Igbt, Module, N-Ch, 1.2Kv, 150A; Transistor Polarity:n Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes

***trelec: Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.75 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Configuration = Dual / Channel Type = N-Channel / Power Dissipation (Pd) W = 790 / Continuous Collector Current (Ic) A = 150 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Emitter Leakage Current nA = 100 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tray

***ineon: Our well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled 4 Diode are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Low V CEsat; T vj op = 150C; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ical: Trans IGBT Module N-CH 1200V 105A 350000mW 24-Pin EconoPIM3 Tray

***ineon SCT: EconoPIM™ 3 1200V three phase PIM IGBT module with IGBT3 and NTC, AG-ECONO3-3, RoHS

***ment14 APAC: IGBT MODULE, 1200V, ECONOPIM; Transistor Polarity:N Channel; DC Collector Current:105A; Emitter Saturation Voltage Vce(on):2.3V; Power

***ark: IGBT MODULE, 1200V, ECONOPIM; Continuous Collector Current:105A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:350W; Operating Temperature Max:125°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

***ineon: EconoPIM 3 1200V three phase PIM IGBT module with IGBT3 and NTC | Summary of Features: Low stray inductance module design; High reliability and power density; Copper base plate for optimized heat spread; Solderable pins; Low switching losses; High switching frequency; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility; Fast, reliable and low cost mounting concept | Target Applications: drives; medical; induction; aircon

***icontronic: Power Bipolar Transistor, 100A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: NPN 125 V 100 A Surface Mount Transistor Power Module - ISOTOP

*** Electronic Components: Bipolar Transistors - BJT NPN Power Module

***ow.cn: Trans GP BJT NPN 125V 100A 250000mW 4-Pin ISOTOP Tube

***nell: TRANSISTOR, NPN, ISOTOP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: -; Power Dissipation Pd: 250W; DC Collector Current: 100A; DC Current Gain hFE: 27hFE; Transistor Case Style

***ark: BIPOLAR TRANSISTOR, NPN, 200V; Transistor Polarity:NPN; Collector Emitter Voltage Max:200V; Continuous Collector Current:100A; Power Dissipation:250W; Transistor Mounting:Module; No. of Pins:4Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes

Market price

Part #	Mfg.	Description	Stock	Price
SEMIX653GB176HDS DISTI # 16M0126	SEMIKRON	IGBT POWER MODULE,Transistor Polarity:N Channel,DC Collector Current:619A,Collector Emitter Saturation Voltage Vce(on):2.45V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2V,No. of Pins:16Pins,Product Range:- RoHS Compliant: Yes	0	25:$214.1300 10:$227.8300 5:$231.2600 1:$234.6900
SEMIX653GB176HDS DISTI # 70098315	SEMIKRON	IGBT,1700 V,660 A @ 25 DegC,650 A @ 80 DegC,1.7 V @ 25 degC RoHS: Compliant	0	1:$346.3000 6:$327.8000 42:$311.1700 96:$296.1400 144:$282.5200

SEMIX653GB176HDS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes