SEMI

SEMI vs SEMI-TECHMZ-01 vs SEMI201209U3R3KT

 
PartNumberSEMISEMI-TECHMZ-01SEMI201209U3R3KT
Description
Manufacturer Part # Description RFQ
SEMI New and Original
SEMI-TECHMZ-01 New and Original
SEMI201209U3R3KT New and Original
SEMI202GB128DS New and Original
SEMI2606 New and Original
SEMI322513U4R7KT(4.7UH New and Original
SEMI4402A New and Original
SEMI4402BCD New and Original
SEMI6406 New and Original
SEMI8401 New and Original
SEMIBZX84C3V3LT1 New and Original
SEMICONDCTORS New and Original
SEMICONDUCTOR New and Original
SEMICONDUCTOR SELECTION New and Original
SEMICONOUCTOR New and Original
SEMIKRON New and Original
SEMIPACK New and Original
SEMITEC-S-452T; New and Original
SEMITRANSM1 New and Original
SEMIV/R220K New and Original
SEMIX101GD066HDS New and Original
SEMIX101GD126HDS IGBT MODULE, SIX, 1.2KV, 129A, Transistor Polarity:Six NPN, DC Collector Current:129A, Collector Emitter Saturation Voltage Vce(on):1.7V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ce
SEMIX101GD128DC New and Original
SEMIX101GD128DS New and Original
SEMIX101GD12E4S New and Original
SEMIX101GD12T4S New and Original
SEMIX151GB12E4V4 New and Original
SEMIX151GB12T4S Insulated Gate Bipolar Transistor, 230A I(C), 1200V V(BR)CES, N-Channel
SEMIX151GD126HDS SEMIX, Trench IGBT Module, 1200V, 100A
SEMIX151GD128DS New and Original
SEMIX151GD12E4S IGBT MODULE, SIX, 1.2KV, 232A, Transistor Polarity:Six NPN, DC Collector Current:232A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ce
SEMIX171KH16S RECTIFIER/THYRISTOR DIODE MODULE, 1600V, SEMIX
SEMIX201GD128DS New and Original
SEMIX202GB066HD New and Original
SEMIX202GB066HDS IGBT MODULE, DUAL, 600V, 275A, Transistor Polarity:Dual NPN, DC Collector Current:275A, Collector Emitter Saturation Voltage Vce(on):1.45V, Power Dissipation Pd:45W, Collector Emitter Voltage V(b
SEMIX202GB128D New and Original
SEMIX202GB128DS New and Original
SEMIX202GB12E4S New and Original
SEMIX202GB12T4S New and Original
SEMIX202GB12V4S New and Original
SEMIX202GB12VS IGBT, MODULE, 1.2KV, 310A, Transistor Polarity:Dual NPN, DC Collector Current:310A, Collector Emitter Saturation Voltage Vce(on):1.75V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:
SEMIX223GD12E4C New and Original
SEMIX241DH16S THYRISTOR DIODE MODULE 300A, 1.6KV, SCR Module Type:Bridge Rectifier, Three Phase - SCR / Diode, Peak Repetitive Off-State Voltage, Vdrm:1.6kV, Gate Trigger Current Max, Igt:150mA, Current It av:2
SEMIX241MD008S New and Original
SEMIX251GD126HDS IGBT, 1200 V, 250 A @ 25 DegC, 260 A @ 80 DegC, 1.7 V @ 25 degC
SEMIX252GB126HD New and Original
SEMIX252GB126HDS IGBT MODULE, DUAL, 1.2KV, 242A, Transistor Polarity:Dual NPN, DC Collector Current:242A, Collector Emitter Saturation Voltage Vce(on):1.7V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)
SEMIX253GB126HD New and Original
SEMIX253GD126HDC New and Original
SEMIX291D16S New and Original
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