SEMIX101GD066HDS

Mfr. #:: SEMIX101GD066HDS
Manufacturer:: SEMIKRON
Description:
Lifecycle:: New from this manufacturer.
Datasheet:: SEMIX101GD066HDS Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

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Tags: SEMIX10, SEMIX1, SEMIX, SEMI, SEM

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SEMIX101GD066HDS Description

***(Formerly Allied Electronics): IGBT Half-Bridge Ultrafast, 1200V, SEMITRANS

***ikron: Features: Homogeneous Si Trench = Trenchgate technology V CE(sat) with positive temperature coefficient UL recognised file no. E63532 Typical Applications: Matrix Converter Resonant Inverter Current Source Inverter

***ark: IGBT MODULE, SIX, 600V, 139A; Continuous Collector Current:139A; Collector Emitter Saturation Voltage:1.9V; Power Dissipation:-; Operating Temperature Max:125°C; IGBT Termination:Stud; Collector Emitter Voltage Max:600V RoHS Compliant: Yes

***nell: IGBT MODULE, 600V, 6 PACK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:120A; Voltage, Vce Sat Max:1.9V; Case Style:SEMiX 13s; Collector-to-Emitter Breakdown Voltage:600V; Current Ic Continuous b Max:90A; Current Ic av:120A; Current, Icm Pulsed:120A; External Depth:61.7mm; Fixing Centres:50mm; Fixing Hole Diameter:5.4mm; SMD Marking:SEMiX13s; Temperature, Current:25°C; Time, Rise:36ns; Transistors, No. of:6; Width, External:137.8mm; Voltage:600V

***ure Electronics: FF150R12RT4 Series 1200 V 150 A 790 W Surface Mount IGBT Module

***ark: Igbt, Module, N-Ch, 1.2Kv, 150A; Transistor Polarity:n Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes

***trelec: Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.75 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Configuration = Dual / Channel Type = N-Channel / Power Dissipation (Pd) W = 790 / Continuous Collector Current (Ic) A = 150 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Emitter Leakage Current nA = 100 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tray

***ineon: Our well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled 4 Diode are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Low V CEsat; T vj op = 150C; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ical: Trans IGBT Module N-CH 600V 37A 115000mW 23-Pin EASY1B-1 Tray

***ark: Igbt Module; Transistor Polarity:n Channel; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):600V; Power Dissipation Pd:115W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:23Pins; Product Range:- Rohs Compliant: Yes

***ineon: EasyPIM 1B 600V PIM IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon

***ical: Trans IGBT Module N-CH 1200V 900A 2800000mW Automotive 4-Pin 62MM-2 Tray

***nell: IGBT MODULE, 1200V; Transistor Type:IGBT Module; Voltage, Vces:1200V; Current Ic Continuous a Max:600A; Voltage, Vce Sat Max:2.15V; Power Dissipation:2800W; Case Style:Custom; Termination Type:Screw; Operating Temperature Range:-40°C to +125°C; SVHC:Cobalt dichloride; Collector-to-Emitter Breakdown Voltage:1200V; Current Temperature:80°C; Current, Icm Pulsed:1200A; Full Power Rating Temperature:25°C; Power Dissipation Pd:2800W; Rise Time:90ns; Voltage, Vce Sat Typ:1.7V

***ineon: Our well-known 62 mm 1200V single switch IGBT modules with IGBT3 are the right choice for your design. | Summary of Features: Low Switching Losses; Unbeatable Robustness; V CEsat with positive Temperature Coefficient; Low V CEsat; Package with CTI > 400; High Creepage and Clearance Distances; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***icontronic: Power Bipolar Transistor, 100A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: NPN 125 V 100 A Surface Mount Transistor Power Module - ISOTOP

*** Electronic Components: Bipolar Transistors - BJT NPN Power Module

***ow.cn: Trans GP BJT NPN 125V 100A 250000mW 4-Pin ISOTOP Tube

***nell: TRANSISTOR, NPN, ISOTOP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: -; Power Dissipation Pd: 250W; DC Collector Current: 100A; DC Current Gain hFE: 27hFE; Transistor Case Style

***ark: BIPOLAR TRANSISTOR, NPN, 200V; Transistor Polarity:NPN; Collector Emitter Voltage Max:200V; Continuous Collector Current:100A; Power Dissipation:250W; Transistor Mounting:Module; No. of Pins:4Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes

Market price

Part #	Mfg.	Description	Stock	Price
SEMIX101GD066HDS DISTI # 70098327	SEMIKRON	IGBT HALFBRIDGE ULTRAFAST,1200V,SEMITRANS RoHS: Not Compliant	0	1:$167.6800 4:$156.2100 48:$146.2000 96:$137.4100 192:$129.6100

Image	Part #	Description
	Mfr.#: SEMIX101GD066HDS OMO.#: OMO-SEMIX101GD066HDS-1190	New and Original
	Mfr.#: SEMIX101GD126HDS OMO.#: OMO-SEMIX101GD126HDS-1190	IGBT MODULE, SIX, 1.2KV, 129A, Transistor Polarity:Six NPN, DC Collector Current:129A, Collector Emitter Saturation Voltage Vce(on):1.7V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ce
	Mfr.#: SEMIX101GD128DC OMO.#: OMO-SEMIX101GD128DC-1190	New and Original
	Mfr.#: SEMIX101GD128DS OMO.#: OMO-SEMIX101GD128DS-1190	New and Original
	Mfr.#: SEMIX101GD12E4S OMO.#: OMO-SEMIX101GD12E4S-1190	New and Original
	Mfr.#: SEMIX101GD12T4S OMO.#: OMO-SEMIX101GD12T4S-1190	New and Original

SEMIX101GD066HDS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes