APTGT300A60G

Mfr. #:: APTGT300A60G
Manufacturer:: Microchip / Microsemi
Description:: IGBT Modules DOR CC6153
Lifecycle:: New from this manufacturer.
Datasheet:: APTGT300A60G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: APTGT300A60G Datasheet APTGT300A60G Datasheet (P4-P6)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Microchip

Product Category:: IGBT Modules

RoHS:: Y

Product:: IGBT Silicon Modules

Configuration:: Dual

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 1.4 V

Continuous Collector Current at 25 C:: 430 A

Gate-Emitter Leakage Current:: 500 nA

Pd - Power Dissipation:: 1.15 kW

Package / Case:: SP6

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 100 C

Packaging:: Tube

Brand:: Microchip / Microsemi

Mounting Style:: Chassis Mount

Maximum Gate Emitter Voltage:: 20 V

Product Type:: IGBT Modules

Factory Pack Quantity:: 1

Subcategory:: IGBTs

Unit Weight:: 3.880136 oz

Tags: APTGT300A6, APTGT300A, APTGT300, APTGT30, APTGT3, APTGT, APTG, APT

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

APTGT300A60G Description

*** Stop Electro: Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel

***et: Trans IGBT Module N-CH 600V 430A 7-Pin Case SP6

***rochip SCT: High Voltage Power Module, Phase leg, 600V, RoHS

***ark: PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes

***i-Key: IGBT MODULE TRENCH PHASE LEG SP6

***ical: Trans IGBT Module N-CH 600V 430A 1150000mW 12-Pin Case SP-6 Tube

*** Stop Electro: Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel

***rochip SCT: High Voltage Power Module, Full bridge, 600V, RoHS

***ark: PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes

***i-Key: IGBT MOD TRENCH FULL BRIDGE SP6

*** Electronic Components: Motor / Motion / Ignition Controllers & Drivers 600V 400A IGBT Module

***eco: 600V 400A LOW SATURATION IGBT MODULE

*** International: IGBT POWER MOD 600V 300A 7PM-IA

***ure Electronics: APTGT450x Series 600 V 550 A Trench + Field Stop IGBT Power Module - SP6

*** Stop Electro: Insulated Gate Bipolar Transistor, 550A I(C), 600V V(BR)CES, N-Channel

***ical: Trans IGBT Module N-CH 600V 550A 1750000mW 7-Pin Case SP-6 Tube

***rochip SCT: High Voltage Power Module, Phase leg, 600V, RoHS

***ark: PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes

***DA Technology Co., Ltd.: Product Description Demo for Development.

***i-Key: POWER MOD IGBT TRENCH PH LEG SP6

***et Europe: Trans IGBT Module N-CH 600V 300A nom 1250W 7-Pin 106.4x61.4mm

***nsix Microsemi: Insulated Gate Bipolar Transistor, 375A I(C), 600V V(BR)CES, N-Channel

*** Electronic Components: IGBT Modules 600V 300A DUAL

***omponent: Infineon power module

***el Nordic: Contact for details

*** Electronic Components: Motor / Motion / Ignition Controllers & Drivers Molding Type Module

***el Electronic: Trans IGBT Module N-CH 600V 400A 8-Pin PM-IA

***DA Technology Co., Ltd.: Product Description Demo for Development.

***omponent: Fairchild Semiconductor power module

***ical: Trans IGBT Module N-CH 600V 37A 115000mW 23-Pin EASY1B-1 Tray

***ark: Igbt Module; Transistor Polarity:n Channel; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):600V; Power Dissipation Pd:115W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:23Pins; Product Range:- Rohs Compliant: Yes

***ineon: EasyPIM 1B 600V PIM IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon

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Availability

Stock:: Available
On Order:: 3000
Enter Quantity:

Current price of APTGT300A60G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

100: ~~$140.76~~; ~~$14 076.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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APTGT300A60G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes