APTGT300DA60G

Mfr. #:: APTGT300DA60G
Manufacturer:: Microchip / Microsemi
Description:: IGBT Modules CC6196
Lifecycle:: New from this manufacturer.
Datasheet:: APTGT300DA60G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: APTGT300DA60G Datasheet APTGT300DA60G Datasheet (P4-P6)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Microchip

Product Category:: IGBT Modules

RoHS:: Y

Product:: IGBT Silicon Modules

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 1.4 V

Continuous Collector Current at 25 C:: 430 A

Gate-Emitter Leakage Current:: 500 nA

Pd - Power Dissipation:: 1.15 kW

Package / Case:: SP6

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 100 C

Packaging:: Tube

Brand:: Microchip / Microsemi

Mounting Style:: Chassis Mount

Maximum Gate Emitter Voltage:: 20 V

Product Type:: IGBT Modules

Factory Pack Quantity:: 1

Subcategory:: IGBTs

Unit Weight:: 3.880136 oz

Tags: APTGT300DA, APTGT300D, APTGT300, APTGT30, APTGT3, APTGT, APTG, APT

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

APTGT300DA60G Description

***ark: Pm-Igbt-Tfs-Sp6C Sp6C Tube Rohs Compliant: Yes |Microchip APTGT300DA60G

*** Stop Electro: Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel

***et: Trans IGBT Module N-CH 600V 430A 5-Pin Case SP6

***rochip SCT: High Voltage Power Module, Boost chopper, 600V, RoHS

***el Electronic: IGBT MODULE 600V 430A 1150W SP6

***ure Electronics: APTGT300x Series 600 V 430 A Trench + Field Stop IGBT Power Module - SP4

*** Stop Electro: Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel

***ark: Pm-Igbt-Tfs-Sp4 Sp4 Tube Rohs Compliant: Yes |Microchip APTGT300A60TG

***et: Trans IGBT Module N-CH 600V 430A 10-Pin Case SP4

***rochip SCT: High Voltage Power Module, Phase leg, 600V, RoHS

***i-Key: POWER MOD IGBT TRENCH PH LEG SP4

*** Electronic Components: Motor / Motion / Ignition Controllers & Drivers 600V 400A IGBT Module

***eco: 600V 400A LOW SATURATION IGBT MODULE

*** International: IGBT POWER MOD 600V 300A 7PM-IA

***ure Electronics: APTGT450x Series 600 V 550 A Trench + Field Stop IGBT Power Module - SP6

*** Stop Electro: Insulated Gate Bipolar Transistor, 550A I(C), 600V V(BR)CES, N-Channel

***ark: Pm-Igbt-Tfs-Sp6C Sp6C Tube Rohs Compliant: Yes |Microchip APTGT450A60G

***ical: Trans IGBT Module N-CH 600V 550A 1750000mW 7-Pin Case SP-6 Tube

***rochip SCT: High Voltage Power Module, Phase leg, 600V, RoHS

***DA Technology Co., Ltd.: Product Description Demo for Development.

***i-Key: POWER MOD IGBT TRENCH PH LEG SP6

*** Electronic Components: Motor / Motion / Ignition Controllers & Drivers Molding Type Module

***el Electronic: Trans IGBT Module N-CH 600V 400A 8-Pin PM-IA

***DA Technology Co., Ltd.: Product Description Demo for Development.

***omponent: Fairchild Semiconductor power module

***ical: Trans IGBT Module N-CH 600V 37A 115000mW 23-Pin EASY1B-1 Tray

***ark: Igbt Module; Transistor Polarity:n Channel; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):600V; Power Dissipation Pd:115W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:23Pins; Product Range:- Rohs Compliant: Yes

***ineon: EasyPIM 1B 600V PIM IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon

***ource: EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC

***ment14 APAC: IGBT, LOW POWER, 600V, 50A, EASYPACK; Module Configuration:Six; Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Voltage Vces:1.45V; Power Dissipation Pd:205W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:18; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:205W

***ineon: EasyPACK 1B 600V sixpack IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC. | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Restistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; solar; ups; majorhomeapplicances

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Availability

Stock:: Available
On Order:: 1500
Enter Quantity:

Current price of APTGT300DA60G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

100: ~~$119.25~~; ~~$11 925.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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APTGT300DA60G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes