SIHD7N60ET-GE3

SIHD7N60ET-GE3
Mfr. #:
SIHD7N60ET-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
Lifecycle:
New from this manufacturer.
Datasheet:
SIHD7N60ET-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SIHD7N60ET-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
7 A
Rds On - Drain-Source Resistance:
600 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
20 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
78 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Series:
E
Brand:
Vishay / Siliconix
Fall Time:
14 ns
Product Type:
MOSFET
Rise Time:
13 ns
Factory Pack Quantity:
2000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
24 ns
Typical Turn-On Delay Time:
13 ns
Unit Weight:
0.050717 oz
Tags
SIHD7N60ET, SIHD7, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHD7N60ET-GE3
DISTI # 78-SIHD7N60ET-GE3
Vishay IntertechnologiesMOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
RoHS: Compliant
0
  • 2000:$0.8750
  • 4000:$0.8430
Image Part # Description
SIHD7N60ET1-GE3

Mfr.#: SIHD7N60ET1-GE3

OMO.#: OMO-SIHD7N60ET1-GE3

MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60ET4-GE3

Mfr.#: SIHD7N60ET4-GE3

OMO.#: OMO-SIHD7N60ET4-GE3

MOSFET 600V Vds E Series DPAK TO-252
SIHD7N60ET-GE3

Mfr.#: SIHD7N60ET-GE3

OMO.#: OMO-SIHD7N60ET-GE3

MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60ET5-GE3

Mfr.#: SIHD7N60ET5-GE3

OMO.#: OMO-SIHD7N60ET5-GE3

MOSFET 600V Vds E Series DPAK TO-252
SIHD7N60ETR-GE3

Mfr.#: SIHD7N60ETR-GE3

OMO.#: OMO-SIHD7N60ETR-GE3-317

RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60ETL-GE3

Mfr.#: SIHD7N60ETL-GE3

OMO.#: OMO-SIHD7N60ETL-GE3-317

RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60E-GE3-CUT TAPE

Mfr.#: SIHD7N60E-GE3-CUT TAPE

OMO.#: OMO-SIHD7N60E-GE3-CUT-TAPE-1190

New and Original
SIHD7N60E

Mfr.#: SIHD7N60E

OMO.#: OMO-SIHD7N60E-1190

New and Original
SIHD7N60EGE3

Mfr.#: SIHD7N60EGE3

OMO.#: OMO-SIHD7N60EGE3-1190

Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
SIHD7N60ET4-GE3

Mfr.#: SIHD7N60ET4-GE3

OMO.#: OMO-SIHD7N60ET4-GE3-VISHAY

MOSFET N-CH 600V 7A TO252AA
Availability
Stock:
Available
On Order:
5500
Enter Quantity:
Current price of SIHD7N60ET-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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