FDMC8010ET30

FDMC8010ET30
Mfr. #:
FDMC8010ET30
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET FET 30V 1.3 MOHM PQFN33
Lifecycle:
New from this manufacturer.
Datasheet:
FDMC8010ET30 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FDMC8010ET30 more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
Power-33-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
174 A
Rds On - Drain-Source Resistance:
1.3 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
67 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
65 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
PowerTrench Power Clip
Packaging:
Reel
Height:
0.8 mm
Length:
3.3 mm
Series:
FDMC8010ET30
Transistor Type:
1 N-Channel
Width:
3.3 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
188 S
Fall Time:
5.3 ns
Product Type:
MOSFET
Rise Time:
7.5 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
40 ns
Typical Turn-On Delay Time:
15 ns
Unit Weight:
0.005386 oz
Tags
FDMC8010, FDMC801, FDMC80, FDMC8, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel PowerTrench® MOSFET 30V, 174A, 1.3mΩ
***et
Transistor MOSFET N-CH 30V 174A 8-Pin Power 33 T/R
***r Electronics
Power Field-Effect Transistor, 174A I(D), 174V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***ark
Mosfet, N-Ch, 30V, 174A, 65W, Power 33; Transistor Polarity:n Channel; Continuous Drain Current Id:174A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0009Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Rohs Compliant: Yes
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions.
***emi
N-Channel Power Trench® MOSFET 30 V, 1.23 mΩ
***ment14 APAC
MOSFET, N-CH, 185A, 30V, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:185A; Source Voltage Vds:30V; On Resistance
***r Electronics
Power Field-Effect Transistor, 185A I(D), 30V, 0.00123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***nell
MOSFET, N-CH, 185A, 30V, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 185A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.00096ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.3V; Power Dissipation Pd: 64W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***icroelectronics
N-channel 30 V, 0.00081 Ohm typ., 220 A STripFET H7 Power MOSFET in a PowerFLAT 5x6 package
***ure Electronics
N-Channel 30 V 0.0011 O 46 nC 113 W STripFET VII Power MosFet - PowerFLAT(5 x 6)
***ical
Trans MOSFET N-CH 30V 220A 8-Pin Power Flat EP T/R
***ronik
N-CH 30V 220A 1,1mOhm PwFLAT5x6
***el Electronic
IC REG LIN POS ADJ 150MA SOT23-5
***ineon SCT
30V, N-Ch, 1.05 mΩ max, Automotive MOSFET, D2PAK 7pin, OptiMOS™-T2, PG-TO263-7, RoHS
***ical
Trans MOSFET N-CH 30V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
*** Source Electronics
Trans MOSFET N-CH Si 25V 38A 7-Pin Direct-FET MX T/R / MOSFET N-CH 25V 38A DIRECTFET
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 38 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ment14 APAC
N CH MOSFET, 25V, 38A, DIRECTFET MX; Tra; N CH MOSFET, 25V, 38A, DIRECTFET MX; Transistor Polarity:(Not Available); Continuous Drain Current Id:38A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.8V
***ical
Trans MOSFET N-CH 25V 35A 7-Pin Direct-FET MX T/R
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 35 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***nell
MOSFET, N-CH, 25V, 213A, DIRECTFET MX; Transistor Polarity: N Channel; Continuous Drain Current Id: 213A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 800µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6
***ineon
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance; Integrated Monolithic Sckottky Diode | Target Applications: MultiPhase SyncFET
***icroelectronics
N-channel 30 V, 0.0014 Ohm typ., 35 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 package
*** Source Electronics
Trans MOSFET N-CH 30V 195A 8-Pin Power Flat T/R / MOSFET N-CH 30V 35A POWERFLAT6X5
***ure Electronics
N-Channel 30 V 1.75 mOhm Surface Mount STripFET™ V MosFet - PowerFLAT 5x6
***ark
Mosfet, N Channel, 30V, 35A, Powerflat6X5; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; On Resistance Rds(On):0.0014Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10Vrohs Compliant: Yes
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Part # Mfg. Description Stock Price
FDMC8010ET30
DISTI # V72:2272_16119273
ON SemiconductorN-CHANNEL POWERTRENCH MOSFET,5628
  • 3000:$0.7974
  • 1000:$0.8323
  • 500:$0.9725
  • 250:$1.1096
  • 100:$1.1555
  • 25:$1.2971
  • 10:$1.4412
  • 1:$1.8659
FDMC8010ET30
DISTI # V36:1790_16119273
ON SemiconductorN-CHANNEL POWERTRENCH MOSFET,0
  • 3000000:$0.6743
  • 1500000:$0.6747
  • 300000:$0.7193
  • 30000:$0.8057
  • 3000:$0.8206
FDMC8010ET30
DISTI # FDMC8010ET30CT-ND
ON SemiconductorMOSFET N-CH 30V 30A 8-PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2358In Stock
  • 1000:$0.9078
  • 500:$1.0956
  • 100:$1.3336
  • 10:$1.6590
  • 1:$1.8500
FDMC8010ET30
DISTI # FDMC8010ET30DKR-ND
ON SemiconductorMOSFET N-CH 30V 30A 8-PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2358In Stock
  • 1000:$0.9078
  • 500:$1.0956
  • 100:$1.3336
  • 10:$1.6590
  • 1:$1.8500
FDMC8010ET30
DISTI # FDMC8010ET30TR-ND
ON SemiconductorMOSFET N-CH 30V 30A 8-PQFN
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 6000:$0.7902
  • 3000:$0.8206
FDMC8010ET30
DISTI # 26623752
ON SemiconductorN-CHANNEL POWERTRENCH MOSFET,9000
  • 9000:$0.7346
  • 6000:$0.7455
  • 3000:$0.7742
FDMC8010ET30
DISTI # 25924334
ON SemiconductorN-CHANNEL POWERTRENCH MOSFET,5628
  • 3000:$0.7974
  • 1000:$0.8323
  • 500:$0.9725
  • 250:$1.1096
  • 100:$1.1555
  • 25:$1.2971
  • 10:$1.4412
  • 8:$1.8659
FDMC8010ET30
DISTI # FDMC8010ET30
ON SemiconductorMOSFET N-Channel PowerTrench MOSFET, PowerClip 33 Single - Tape and Reel (Alt: FDMC8010ET30)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.7139
  • 18000:$0.7319
  • 12000:$0.7419
  • 6000:$0.7509
  • 3000:$0.7559
FDMC8010ET30
DISTI # FDMC8010ET30
ON SemiconductorMOSFET N-Channel PowerTrench MOSFET, PowerClip 33 Single (Alt: FDMC8010ET30)
RoHS: Compliant
Min Qty: 3000
Europe - 0
  • 30000:€0.7319
  • 18000:€0.7739
  • 12000:€0.8059
  • 6000:€0.8719
  • 3000:€1.0479
FDMC8010ET30
DISTI # 01AC8546
ON SemiconductorFET 30V 1.3 MOHM PQFN33 / REEL0
  • 1000:$1.0400
  • 500:$1.1200
  • 250:$1.2100
  • 100:$1.3400
  • 1:$1.6600
FDMC8010ET30
DISTI # 512-FDMC8010ET30
ON SemiconductorMOSFET FET 30V 1.3 MOHM PQFN33
RoHS: Compliant
7876
  • 1:$1.7100
  • 10:$1.4500
  • 100:$1.1600
  • 500:$1.0200
  • 1000:$0.8400
  • 3000:$0.7820
  • 6000:$0.7530
  • 9000:$0.7240
FDMC8010ET30
DISTI # 2992330
ON SemiconductorMOSFET, N-CH, 30V, 174A, 65W, POWER 333000
  • 500:£0.7390
  • 250:£0.7890
  • 100:£0.8380
  • 10:£1.0900
  • 1:£1.4100
FDMC8010ET30
DISTI # XSFP00000116121
Fairchild Semiconductor Corporation 
RoHS: Compliant
24000 in Stock0 on Order
  • 24000:$1.0300
  • 3000:$1.1000
FDMC8010ET30
DISTI # 2992330
ON SemiconductorMOSFET, N-CH, 30V, 174A, 65W, POWER 33
RoHS: Compliant
3000
  • 1000:$1.1100
  • 500:$1.3100
  • 250:$1.4200
  • 100:$1.5300
  • 25:$1.9500
  • 5:$2.1600
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Availability
Stock:
Available
On Order:
1990
Enter Quantity:
Current price of FDMC8010ET30 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.71
$1.71
10
$1.45
$14.50
100
$1.16
$116.00
500
$1.02
$510.00
1000
$0.84
$840.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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