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BSC057N08NS3 G

BSC057N08NS3 G
Mfr. #:
BSC057N08NS3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
BSC057N08NS3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
BSC057N08NS3 G more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
80 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
4.7 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
56 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
114 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Transistor Type:
1 N-Channel
Type:
OptiMOS 3 Power-Transistor
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
40 S
Fall Time:
9 ns
Product Type:
MOSFET
Rise Time:
14 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
32 ns
Typical Turn-On Delay Time:
16 ns
Part # Aliases:
BSC057N08NS3GATMA1 BSC57N8NS3GXT SP000447542
Unit Weight:
0.003527 oz
Tags
BSC057N08NS3, BSC057N08, BSC057, BSC05, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
BSC057N08NS3GATMA1
DISTI # BSC057N08NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 80V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.9314
BSC057N08NS3GATMA1
DISTI # BSC057N08NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 80V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.0700
  • 500:$1.2914
  • 100:$1.6603
  • 10:$2.0660
  • 1:$2.2900
BSC057N08NS3GATMA1
DISTI # BSC057N08NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 80V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.0700
  • 500:$1.2914
  • 100:$1.6603
  • 10:$2.0660
  • 1:$2.2900
BSC057N08NS3G
DISTI # BSC057N08NS3 G		Infineon Technologies AGTrans MOSFET N-CH 80V 16A 8-Pin TDSON T/R (Alt: BSC057N08NS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC057N08NS3GATMA1
    DISTI # BSC057N08NS3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 80V 16A 8-Pin TDSON EP - Tape and Reel (Alt: BSC057N08NS3GATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$0.7499
    • 10000:$0.7229
    • 20000:$0.6969
    • 30000:$0.6739
    • 50000:$0.6619
    BSC057N08NS3GATMA1
    DISTI # 79X1332    		Infineon Technologies AGMOSFET, N-CH, 80V, 100A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
    • 1:$1.9200
    • 10:$1.6300
    • 25:$1.5200
    • 50:$1.4200
    • 100:$1.3100
    • 250:$1.2300
    • 500:$1.1400
    • 1000:$0.9450
    BSC057N08NS3 G
    DISTI # 726-BSC057N08NS3G    		Infineon Technologies AGMOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
    RoHS: Compliant    		0
    • 1:$1.9200
    • 10:$1.6300
    • 100:$1.3100
    • 500:$1.1400
    • 1000:$0.9450
    BSC057N08NS3GATMA1
    DISTI # 726-BSC057N08NS3GATM    		Infineon Technologies AGMOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
    RoHS: Compliant    		0
    • 1:$1.9200
    • 10:$1.6300
    • 100:$1.3100
    • 500:$1.1400
    • 1000:$0.9450
    BSC057N08NS3GInfineon Technologies AGPower Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		Europe - 2495
      BSC057N08NS3GATMA1
      DISTI # 2432707      		Infineon Technologies AGMOSFET, N CH, 80V, 100A, TDSON-8
      RoHS: Compliant      		0
      • 5:£1.7200
      • 25:£1.5800
      • 100:£1.2600
      BSC057N08NS3GATMA1
      DISTI # 2432707      		Infineon Technologies AGMOSFET, N CH, 80V, 100A, TDSON-8
      RoHS: Compliant      		0
      • 1:$3.0400
      • 10:$2.5900
      • 100:$2.0700
      BSC057N08NS3GATMA1
      DISTI # 2432707RL      		Infineon Technologies AGMOSFET, N CH, 80V, 100A, TDSON-8
      RoHS: Compliant      		0
      • 1:$3.0400
      • 10:$2.5900
      • 100:$2.0700
      BSC057N08NS3GInfineon Technologies AG80V,100A,N-channel power MOSFET40
      • 1:$1.2600
      • 100:$1.0500
      • 500:$0.9200
      • 1000:$0.9000
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      Availability
      Stock:
      Available
      On Order:
      3500
      Enter Quantity:
      Current price of BSC057N08NS3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.91
      $1.91
      10
      $1.62
      $16.20
      100
      $1.30
      $130.00
      500
      $1.14
      $570.00
      1000
      $0.94
      $945.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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