BSC057N08NS3

BSC057N08NS3 G vs BSC057N08NS3G vs BSC057N08NS3G , TDA8035H

 
PartNumberBSC057N08NS3 GBSC057N08NS3GBSC057N08NS3G , TDA8035H
DescriptionMOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3Trans MOSFET N-CH 80V 16A 8-Pin TDSON T/R (Alt: BSC057N08NS3 G)
ManufacturerInfineonFEELING-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance4.7 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge56 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation114 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
Transistor Type1 N-Channel--
TypeOptiMOS 3 Power-Transistor--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min40 S--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time14 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time32 ns--
Typical Turn On Delay Time16 ns--
Part # AliasesBSC057N08NS3GATMA1 BSC57N8NS3GXT SP000447542--
Unit Weight0.003527 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC057N08NS3GATMA1 MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
BSC057N08NS3 G MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
BSC057N08NS3GATMA1 MOSFET N-CH 80V 100A TDSON-8
BSC057N08NS3 G MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
BSC057N08NS3G Trans MOSFET N-CH 80V 16A 8-Pin TDSON T/R (Alt: BSC057N08NS3 G)
BSC057N08NS3G , TDA8035H New and Original
BSC057N08NS3G. New and Original
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