BSC057N08NS

BSC057N08NS3GATMA1 vs BSC057N08NS3 G

 
PartNumberBSC057N08NS3GATMA1BSC057N08NS3 G
DescriptionMOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CasePG-TDSON-8TDSON-8
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage80 V80 V
Id Continuous Drain Current100 A100 A
Rds On Drain Source Resistance5.7 mOhms4.7 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V
Vgs Gate Source Voltage10 V20 V
Qg Gate Charge42 nC56 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation114 W114 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingReelReel
Height1.27 mm1.27 mm
Length5.9 mm5.9 mm
Transistor Type1 N-Channel1 N-Channel
Width5.15 mm5.15 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min40 S40 S
Development KitEVAL_1K4W_ZVS_FB_CFD7-
Fall Time9 ns9 ns
Product TypeMOSFETMOSFET
Rise Time14 ns14 ns
Factory Pack Quantity50005000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time32 ns32 ns
Typical Turn On Delay Time16 ns16 ns
Part # AliasesBSC057N08NS3 BSC57N8NS3GXT G SP000447542BSC057N08NS3GATMA1 BSC57N8NS3GXT SP000447542
Unit Weight0.003527 oz0.003527 oz
Type-OptiMOS 3 Power-Transistor
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC057N08NS3GATMA1 MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
BSC057N08NS3 G MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
BSC057N08NS3 G MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
BSC057N08NS3GATMA1 MOSFET N-CH 80V 100A TDSON-8
BSC057N08NS New and Original
BSC057N08NS3G Trans MOSFET N-CH 80V 16A 8-Pin TDSON T/R (Alt: BSC057N08NS3 G)
BSC057N08NS3G , TDA8035H New and Original
BSC057N08NS3G. New and Original
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