IPB027N10N3 G

Mfr. #:: IPB027N10N3 G
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
Lifecycle:: New from this manufacturer.
Datasheet:: IPB027N10N3 G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: IPB027N10N3 G more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 120 A

Rds On - Drain-Source Resistance:: 2.3 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 206 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 300 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Series:: OptiMOS 3

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 94 S

Fall Time:: 28 ns

Product Type:: MOSFET

Rise Time:: 58 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 84 ns

Typical Turn-On Delay Time:: 34 ns

Part # Aliases:: IPB027N10N3GATMA1 IPB27N1N3GXT SP000506508

Unit Weight:: 0.139332 oz

Tags: IPB027N10N3, IPB027, IPB02, IPB0, IPB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IPB027N10N3 G More Information

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IPB027N10N3GATMA1 DISTI # V72:2272_06377077	Infineon Technologies AG	Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	601	500:$2.7250 250:$3.3290 100:$3.6080 25:$3.9880 10:$4.0330 1:$4.7620
IPB027N10N3GATMA1 DISTI # IPB027N10N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2759In Stock	500:$3.7670 100:$4.6520 10:$5.6730 1:$6.3500
IPB027N10N3GATMA1 DISTI # IPB027N10N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2759In Stock	500:$3.7670 100:$4.6520 10:$5.6730 1:$6.3500
IPB027N10N3GATMA1 DISTI # IPB027N10N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 120A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	2000In Stock	1000:$3.0845
IPB027N10N3 G DISTI # 30581325	Infineon Technologies AG	Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) TO-263 RoHS: Compliant	1560	50:$3.4935 10:$4.6792 4:$6.9615
IPB027N10N3GATMA1 DISTI # 31343658	Infineon Technologies AG	Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	601	3:$4.7620
IPB027N10N3 G DISTI # IPB027N10N3 G	Infineon Technologies AG	Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: IPB027N10N3 G) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 1000	1000:$2.8613 2000:$2.7818 3000:$2.7066 5000:$2.6354 10000:$2.6012 25000:$2.5678 50000:$2.5353
IPB027N10N3GATMA1 DISTI # IPB027N10N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB027N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$2.6900 2000:$2.6900 4000:$2.6900 6000:$2.6900 10000:$2.6900
IPB027N10N3GATMA1. DISTI # 27AC6718	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:300W,No. of Pins:3Pins RoHS Compliant: Yes	0	1:$2.6900
IPB027N10N3GATMA1 DISTI # 85X6013	Infineon Technologies AG	MOSFET, N-CH, 100V, 120A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes	2	1:$5.8400 10:$4.9600 25:$4.7400 50:$4.5200 100:$4.3000 250:$4.0800 500:$3.6600 1000:$3.0900
IPB027N10N3GATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	10	1000:$2.4200 500:$2.5500 100:$2.6500 25:$2.7700 1:$2.9800
IPB027N10N3 G DISTI # 726-IPB027N10N3G	Infineon Technologies AG	MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 RoHS: Compliant	0	1:$5.3100 10:$4.5100 100:$3.9100 250:$3.7100 500:$3.3300 1000:$2.8100
IPB027N10N3GATMA1 DISTI # 726-IPB027N10N3GATMA	Infineon Technologies AG	MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 RoHS: Compliant	50	1:$5.3100 10:$4.5100 100:$3.9100 250:$3.7100 500:$3.3300 1000:$2.8100
IPB027N10N3GATMA1 DISTI # 8259235P	Infineon Technologies AG	MOSFET N-CH 120A 100V OPTIMOS3 TO263, RL	922	10:£2.9900 50:£2.7250 250:£2.4600 500:£2.2150
IPB027N10N3GATMA1 DISTI # 8259235	Infineon Technologies AG	MOSFET N-CH 120A 100V OPTIMOS3 TO263, PK	184	2:£3.9150 10:£2.9900 50:£2.7250 250:£2.4600 500:£2.2150
IPB027N10N3G	Infineon Technologies AG	POWER FIELD-EFFECT TRANSISTOR, 120A I(D), 100V, 0.0027OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB	46	9:$2.4000 3:$3.2000 1:$4.8000
IPB027N10N3G	Infineon Technologies AG		144
IPB027N10N3G	Infineon Technologies AG		58	2:$3.5840 8:$2.3296 23:$1.7920
IPB027N10N3 G	Infineon Technologies AG		354
IPB027N10N3 G	Infineon Technologies AG	RoHS(ship within 1day)	300	1:$5.5000 10:$4.6900 50:$4.0600 100:$3.8800 500:$3.7200 1000:$3.6400
IPB027N10N3GATMA1 DISTI # C1S322000524457	Infineon Technologies AG	Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	601	1:$3.6400
IPB027N10N3 G DISTI # C1S322000194070	Infineon Technologies AG	Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1560	50:$2.7400 10:$3.6700 1:$5.4600
IPB027N10N3GATMA1 DISTI # 2443379	Infineon Technologies AG	MOSFET, N CH, 100V, 120A, TO-263-3 RoHS: Compliant	0	1:$8.4000 10:$7.1400 100:$6.1900 250:$5.8700 500:$5.2800 1000:$4.4500
IPB027N10N3GATMA1 DISTI # 2443379RL	Infineon Technologies AG	MOSFET, N CH, 100V, 120A, TO-263-3 RoHS: Compliant	0	1:$8.4000 10:$7.1400 100:$6.1900 250:$5.8700 500:$5.2800 1000:$4.4500
IPB027N10N3GATMA1 DISTI # 2443379	Infineon Technologies AG	MOSFET, N CH, 100V, 120A, TO-263-3 RoHS: Compliant	99	1:£3.9600 10:£2.7600 100:£2.6200 250:£2.4800 500:£2.2400

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Availability

Stock:: Available
On Order:: 1993
Enter Quantity:

Current price of IPB027N10N3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$5.30~~; ~~$5.30~~

10: ~~$4.50~~; ~~$45.00~~

100: ~~$3.90~~; ~~$390.00~~

250: ~~$3.70~~; ~~$925.00~~

500: ~~$3.32~~; ~~$1 660.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPB027N10N3 G

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Vacuum Packaging with PL

Step2:
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Step3:
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