 | | | |
| PartNumber | IPB027N10N3 G | IPB027N10N3GATMA1 | IPB027N10N5ATMA1 |
| Description | MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 100V 120A D2PAK-2 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | PG-TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 120 A | 120 A | 120 A |
| Rds On Drain Source Resistance | 2.3 mOhms | 2.7 mOhms | 3.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2.2 V |
| Vgs Gate Source Voltage | 20 V | 10 V | 20 V |
| Qg Gate Charge | 206 nC | 155 nC | 112 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 300 W | 300 W | 250 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 94 S | 94 S | 102 S |
| Fall Time | 28 ns | 28 ns | 17 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 58 ns | 58 ns | 15 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 84 ns | 84 ns | 52 ns |
| Typical Turn On Delay Time | 34 ns | 34 ns | 26 ns |
| Part # Aliases | IPB027N10N3GATMA1 IPB27N1N3GXT SP000506508 | G IPB027N10N3 IPB27N1N3GXT SP000506508 | IPB027N10N5 SP001227034 |
| Unit Weight | 0.139332 oz | 0.068654 oz | 0.139332 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB027N10N3 G | MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | |
| IPB027N10N3GATMA1 | MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | ||
| IPB027N10N5ATMA1 | MOSFET N-Ch 100V 120A D2PAK-2 | ||
| IPB027N10N3GATMA1 | MOSFET N-CH 100V 120A TO263-3 | ||
| IPB027N10N5ATMA1 | RF Bipolar Transistors MOSFET N-Ch 100V 120A D2PAK-2 | ||
| IPB027N10N3G | MOSFET N-CH 120A 100V OPTIMOS3 TO263, RL | ||
| IPB027N10N5ATMA1-CUT TAPE | New and Original | ||
| IPB027N10N 027N10N | New and Original | ||
| IPB027N10N3GE8187ATMA1 | Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: SP001044582) | ||
| IPB027N10N3GS | New and Original | ||
| IPB027N10N5 | N-CH 100V 120A 2,7mOhm TO263-3 | ||
| IPB027N10N3 G | IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 |