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Part # | Mfg. | Description | Stock | Price |
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IPB027N10N3GATMA1 DISTI # IPB027N10N3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 2767In Stock |
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IPB027N10N3GATMA1 DISTI # IPB027N10N3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 2767In Stock |
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IPB027N10N3GATMA1 DISTI # IPB027N10N3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 120A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | 2000In Stock |
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IPB027N10N3GATMA1 DISTI # IPB027N10N3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB027N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
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IPB027N10N3GATMA1 DISTI # SP000506508 | Infineon Technologies AG | Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: SP000506508) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 0 |
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IPB027N10N3GATMA1 DISTI # 85X6013 | Infineon Technologies AG | MOSFET, N-CH, 100V, 120A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes | 156 |
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IPB027N10N3GATMA1. DISTI # 27AC6718 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:300W,No. of Pins:3Pins RoHS Compliant: Yes | 0 | |
IPB027N10N3GATMA1 | Infineon Technologies AG | Single N-Channel 100 V 4.5 mOhm 206 nC OptiMOS Power Mosfet - D2PAK RoHS: Not Compliant | 2000Reel |
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IPB027N10N3 G DISTI # 726-IPB027N10N3G | Infineon Technologies AG | MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 RoHS: Compliant | 5900 |
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IPB027N10N3GATMA1 DISTI # 726-IPB027N10N3GATMA | Infineon Technologies AG | MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 RoHS: Compliant | 757 |
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IPB027N10N3GATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 10 |
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IPB027N10N3GATMA1 DISTI # 8259235 | Infineon Technologies AG | MOSFET N-CH 120A 100V OPTIMOS3 TO263, PK | 184 |
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IPB027N10N3GATMA1 DISTI # 8259235P | Infineon Technologies AG | MOSFET N-CH 120A 100V OPTIMOS3 TO263, RL | 922 |
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IPB027N10N3GATMA1 DISTI # 2443379 | Infineon Technologies AG | MOSFET, N CH, 100V, 120A, TO-263-3 RoHS: Compliant | 154 |
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IPB027N10N3GATMA1 DISTI # 2443379RL | Infineon Technologies AG | MOSFET, N CH, 100V, 120A, TO-263-3 RoHS: Compliant | 0 |
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IPB027N10N3GATMA1 DISTI # 2443379 | Infineon Technologies AG | MOSFET, N CH, 100V, 120A, TO-263-3 RoHS: Compliant | 254 |
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IPB027N10N3GATMA1 DISTI # XSFP00000103332 | Infineon Technologies AG | RoHS: Compliant | 1346 |
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Image | Part # | Description |
---|---|---|
Mfr.#: IPB027N10N3 G OMO.#: OMO-IPB027N10N3-G |
MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | |
Mfr.#: IPB027N10N3GATMA1 OMO.#: OMO-IPB027N10N3GATMA1 |
MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | |
Mfr.#: IPB027N10N3G OMO.#: OMO-IPB027N10N3G-1190 |
MOSFET N-CH 120A 100V OPTIMOS3 TO263, RL | |
Mfr.#: IPB027N10N3GATMA1 |
MOSFET N-CH 100V 120A TO263-3 | |
Mfr.#: IPB027N10N5ATMA1-CUT TAPE |
New and Original | |
Mfr.#: IPB027N10N 027N10N OMO.#: OMO-IPB027N10N-027N10N-1190 |
New and Original | |
Mfr.#: IPB027N10N3GS OMO.#: OMO-IPB027N10N3GS-1190 |
New and Original | |
Mfr.#: IPB027N10N5 OMO.#: OMO-IPB027N10N5-1190 |
N-CH 100V 120A 2,7mOhm TO263-3 | |
Mfr.#: IPB027N10N3 G OMO.#: OMO-IPB027N10N3-G-126 |
IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | |
Mfr.#: IPB027N10N5ATMA1 |
RF Bipolar Transistors MOSFET N-Ch 100V 120A D2PAK-2 |