 | |  | |
| PartNumber | IPB027N10N3 G | IPB027N10N3GATMA1 | IPB027N10N3G |
| Description | MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | MOSFET N-CH 120A 100V OPTIMOS3 TO263, RL |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | PG-TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 120 A | 120 A | - |
| Rds On Drain Source Resistance | 2.3 mOhms | 2.7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 10 V | - |
| Qg Gate Charge | 206 nC | 155 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 300 W | 300 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 94 S | 94 S | - |
| Fall Time | 28 ns | 28 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 58 ns | 58 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 84 ns | 84 ns | - |
| Typical Turn On Delay Time | 34 ns | 34 ns | - |
| Part # Aliases | IPB027N10N3GATMA1 IPB27N1N3GXT SP000506508 | G IPB027N10N3 IPB27N1N3GXT SP000506508 | - |
| Unit Weight | 0.139332 oz | 0.068654 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB027N10N3 G | MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | |
| IPB027N10N3GATMA1 | MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | ||
| IPB027N10N3GATMA1 | MOSFET N-CH 100V 120A TO263-3 | ||
| IPB027N10N3G | MOSFET N-CH 120A 100V OPTIMOS3 TO263, RL | ||
| IPB027N10N3GE8187ATMA1 | Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: SP001044582) | ||
| IPB027N10N3GS | New and Original | ||
| IPB027N10N3 G | IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 |