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IPB027N10N3GATMA1

IPB027N10N3GATMA1
Mfr. #:
IPB027N10N3GATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
IPB027N10N3GATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PG-TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
120 A
Rds On - Drain-Source Resistance:
2.7 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
155 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
300 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
94 S
Fall Time:
28 ns
Product Type:
MOSFET
Rise Time:
58 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
84 ns
Typical Turn-On Delay Time:
34 ns
Part # Aliases:
G IPB027N10N3 IPB27N1N3GXT SP000506508
Unit Weight:
0.068654 oz
Tags
IPB027N10N3, IPB027, IPB02, IPB0, IPB
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 4.5 mOhm 206 nC OptiMOS™ Power Mosfet - D2PAK
***ow.cn
Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; On Resistance Rds(On):0.0023Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V Rohs Compliant: Yes
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Part # Mfg. Description Stock Price
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2767In Stock
  • 500:$3.7670
  • 100:$4.6520
  • 10:$5.6730
  • 1:$6.3500
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2767In Stock
  • 500:$3.7670
  • 100:$4.6520
  • 10:$5.6730
  • 1:$6.3500
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		2000In Stock
  • 1000:$3.0845
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB027N10N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.6900
  • 2000:$2.6900
  • 4000:$2.6900
  • 6000:$2.6900
  • 10000:$2.6900
IPB027N10N3GATMA1
DISTI # SP000506508		Infineon Technologies AGTrans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: SP000506508)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€2.6900
  • 2000:€2.5900
  • 4000:€2.4900
  • 6000:€2.2900
  • 10000:€2.0900
IPB027N10N3GATMA1
DISTI # 85X6013		Infineon Technologies AGMOSFET, N-CH, 100V, 120A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes156
  • 1:$5.3100
  • 10:$4.5100
  • 25:$4.3100
  • 50:$4.1100
  • 100:$3.9100
  • 250:$3.7100
  • 500:$3.3300
IPB027N10N3GATMA1.
DISTI # 27AC6718		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:300W,No. of Pins:3Pins RoHS Compliant: Yes0
    IPB027N10N3GATMA1Infineon Technologies AGSingle N-Channel 100 V 4.5 mOhm 206 nC OptiMOS Power Mosfet - D2PAK
    RoHS: Not Compliant    		2000Reel
    • 1000:$3.0800
    IPB027N10N3 G
    DISTI # 726-IPB027N10N3G    		Infineon Technologies AGMOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		5900
    • 1:$5.3100
    • 10:$4.5100
    • 100:$3.9100
    • 250:$3.7100
    • 500:$3.3300
    • 1000:$2.8100
    IPB027N10N3GATMA1
    DISTI # 726-IPB027N10N3GATMA    		Infineon Technologies AGMOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		757
    • 1:$5.3100
    • 10:$4.5100
    • 100:$3.9100
    • 250:$3.7100
    • 500:$3.3300
    • 1000:$2.8100
    IPB027N10N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		10
    • 1000:$2.4200
    • 500:$2.5500
    • 100:$2.6500
    • 25:$2.7700
    • 1:$2.9800
    IPB027N10N3GATMA1
    DISTI # 8259235    		Infineon Technologies AGMOSFET N-CH 120A 100V OPTIMOS3 TO263, PK184
    • 2:£3.9150
    • 10:£2.9900
    • 50:£2.7250
    • 250:£2.4600
    • 500:£2.2150
    IPB027N10N3GATMA1
    DISTI # 8259235P    		Infineon Technologies AGMOSFET N-CH 120A 100V OPTIMOS3 TO263, RL922
    • 10:£2.9900
    • 50:£2.7250
    • 250:£2.4600
    • 500:£2.2150
    IPB027N10N3GATMA1
    DISTI # 2443379    		Infineon Technologies AGMOSFET, N CH, 100V, 120A, TO-263-3
    RoHS: Compliant    		154
    • 1:$8.4000
    • 10:$7.1400
    • 100:$6.1900
    • 250:$5.8700
    • 500:$5.2800
    • 1000:$4.4500
    IPB027N10N3GATMA1
    DISTI # 2443379RL    		Infineon Technologies AGMOSFET, N CH, 100V, 120A, TO-263-3
    RoHS: Compliant    		0
    • 1:$8.4000
    • 10:$7.1400
    • 100:$6.1900
    • 250:$5.8700
    • 500:$5.2800
    • 1000:$4.4500
    IPB027N10N3GATMA1
    DISTI # 2443379    		Infineon Technologies AGMOSFET, N CH, 100V, 120A, TO-263-3
    RoHS: Compliant    		254
    • 1:£3.7700
    • 10:£2.7600
    • 100:£2.4800
    • 250:£2.3000
    • 500:£2.1100
    IPB027N10N3GATMA1
    DISTI # XSFP00000103332    		Infineon Technologies AG 
    RoHS: Compliant    		1346
    • 1000:$4.1100
    • 1346:$3.8500
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    Availability
    Stock:
    Available
    On Order:
    1987
    Enter Quantity:
    Current price of IPB027N10N3GATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $5.30
    $5.30
    10
    $4.50
    $45.00
    100
    $3.90
    $390.00
    250
    $3.70
    $925.00
    500
    $3.32
    $1 660.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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