IXFN26N90

IXFN26N90
Mfr. #:
IXFN26N90
Manufacturer:
Littelfuse
Description:
MOSFET 900V 26A
Lifecycle:
New from this manufacturer.
Datasheet:
IXFN26N90 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Chassis Mount
Package / Case:
SOT-227-4
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
900 V
Id - Continuous Drain Current:
26 A
Rds On - Drain-Source Resistance:
300 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
600 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
HyperFET
Packaging:
Tube
Height:
9.6 mm
Length:
38.23 mm
Series:
IXFN26N90
Transistor Type:
1 N-Channel
Width:
25.42 mm
Brand:
IXYS
Forward Transconductance - Min:
28 S
Fall Time:
24 ns
Product Type:
MOSFET
Rise Time:
35 ns
Factory Pack Quantity:
10
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
130 ns
Typical Turn-On Delay Time:
60 ns
Unit Weight:
1.058219 oz
Tags
IXFN26N, IXFN26, IXFN2, IXFN, IXF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet Transistor, N Channel, 26 A, 900 V, 300 Mohm, 10 V, 5 V Rohs Compliant: Yes
***inecomponents.com
Trans MOSFET N-CH 900V 26A 4-Pin SOT-227B
***ment14 APAC
MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:900V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:600W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:ISOTOP; No. of Pins:3; Avalanche Single Pulse Energy Eas:3J; Current Id Max:26A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:300mohm; Package / Case:ISOTOP; Power Dissipation Pd:600W; Power Dissipation Pd:600W; Pulse Current Idm:104A; Rate of Voltage Change dv / dt:5Vµs; Repetitive Avalanche Energy Max:64mJ; Termination Type:Screw; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Weight:0.044kg
Part # Mfg. Description Stock Price
IXFN26N90
DISTI # V99:2348_17750909
IXYS CorporationTrans MOSFET N-CH 900V 26A 4-Pin SOT-227B
RoHS: Compliant
0
    IXFN26N90
    DISTI # IXFN26N90-ND
    IXYS CorporationMOSFET N-CH 900V 26A SOT-227B
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    175In Stock
    • 100:$26.9864
    • 30:$29.0360
    • 10:$31.5980
    • 1:$34.1600
    IXFN26N90
    DISTI # 14J1685
    IXYS CorporationMOSFET Transistor, N Channel, 26 A, 900 V, 300 mohm, 10 V, 5 V RoHS Compliant: Yes0
      IXFN26N90
      DISTI # 747-IXFN26N90
      IXYS CorporationMOSFET 900V 26A
      RoHS: Compliant
      0
      • 20:$31.6000
      • 30:$29.0400
      • 50:$27.8000
      • 100:$26.9900
      • 200:$24.7700
      IXFN26N90
      DISTI # 4905570
      IXYS CorporationMOSFET, N, SOT-227B
      RoHS: Compliant
      0
      • 250:$37.5200
      • 100:$40.8900
      • 30:$43.9900
      • 10:$47.8700
      • 1:$51.7500
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      Availability
      Stock:
      Available
      On Order:
      3500
      Enter Quantity:
      Current price of IXFN26N90 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      20
      $31.60
      $632.00
      30
      $29.04
      $871.20
      50
      $27.80
      $1 390.00
      100
      $26.99
      $2 699.00
      200
      $24.77
      $4 954.00
      500
      $23.57
      $11 785.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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