IXFN26N

IXFN26N100P vs IXFN26N120P vs IXFN26N50Q

 
PartNumberIXFN26N100PIXFN26N120PIXFN26N50Q
DescriptionMOSFET 26 Amps 1000V 0.39 RdsMOSFET 26 Amps 1200V
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleChassis MountChassis Mount-
Package / CaseSOT-227-4SOT-227-4-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1 kV1.2 kV-
Id Continuous Drain Current23 A23 A-
Rds On Drain Source Resistance390 mOhms460 mOhms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation595 W695 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHiPerFET-
PackagingTubeTube-
Height9.6 mm9.6 mm-
Length38.23 mm38.23 mm-
SeriesIXFN26N100IXFN26N120-
Transistor Type1 N-Channel1 N-Channel-
Width25.42 mm25.42 mm-
BrandIXYSIXYS-
Fall Time50 ns58 ns-
Product TypeMOSFETMOSFET-
Rise Time45 ns55 ns-
Factory Pack Quantity1010-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time72 ns76 ns-
Typical Turn On Delay Time45 ns56 ns-
Unit Weight1.058219 oz1.058219 oz-
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXFN26N100P MOSFET 26 Amps 1000V 0.39 Rds
IXFN26N120P MOSFET 26 Amps 1200V
IXFN26N90 MOSFET 900V 26A
IXFN26N50Q New and Original
IXFN26N90 MOSFET 900V 26A
IXFN26N120P MOSFET 26 Amps 1200V
IXFN26N100P MOSFET 26 Amps 1000V 0.39 Rds
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