PartNumber | IXFN200N10P | IXFN200N07 | IXFN20N120 |
Description | MOSFET 200 Amps 100V 0.0075 Rds | MOSFET 70V 200A | MOSFET 20 Amps 1200 V 0.75 Ohms Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
Package / Case | SOT-227-4 | SOT-227-4 | SOT-227-4 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 70 V | 1.2 kV |
Id Continuous Drain Current | 200 A | 200 A | 20 A |
Rds On Drain Source Resistance | 7.5 mOhms | 6 mOhms | 750 mOhms |
Vgs Gate Source Voltage | 20 V | 20 V | 30 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
Pd Power Dissipation | 680 W | 520 W | 780 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | HiPerFET | HyperFET | HyperFET |
Packaging | Tube | Tube | Tube |
Height | 9.6 mm | 9.6 mm | 9.6 mm |
Length | 38.23 mm | 38.23 mm | 38.2 mm |
Series | IXFN200N10 | IXFN200N07 | IXFN20N120 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 25.42 mm | 25.42 mm | 25.07 mm |
Brand | IXYS | IXYS | IXYS |
Fall Time | 90 ns | 60 ns | 20 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 35 ns | 60 ns | 45 ns |
Factory Pack Quantity | 10 | 10 | 10 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 150 ns | 100 ns | 75 ns |
Typical Turn On Delay Time | 30 ns | 30 ns | 25 ns |
Unit Weight | 1.058219 oz | 1.058219 oz | 1.058219 oz |
Forward Transconductance Min | - | 80 S | - |