IXFN27N80

IXFN27N80
Mfr. #:
IXFN27N80
Manufacturer:
Littelfuse
Description:
MOSFET 800V 27A
Lifecycle:
New from this manufacturer.
Datasheet:
IXFN27N80 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN27N80 DatasheetIXFN27N80 Datasheet (P4)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Chassis Mount
Package / Case:
SOT-227-4
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
27 A
Rds On - Drain-Source Resistance:
300 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
520 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
HyperFET
Packaging:
Tube
Height:
9.6 mm
Length:
38.23 mm
Series:
IXFN27N80
Transistor Type:
1 N-Channel
Width:
25.42 mm
Brand:
IXYS
Forward Transconductance - Min:
28 S
Fall Time:
40 ns
Product Type:
MOSFET
Rise Time:
80 ns
Factory Pack Quantity:
10
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
75 ns
Typical Turn-On Delay Time:
30 ns
Unit Weight:
1.058219 oz
Tags
IXFN27, IXFN2, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 Vds 320 mOhm 520 W Power Mosfet - SOT-227B
***ukat
N-Ch 800V 27A 520W 0,30R SOT227B
***i-Key
MOSFET N-CH 800V 27A SOT-227B
***omponent
IXYS Power Transistor Module
***el Nordic
Contact for details
Part # Mfg. Description Stock Price
IXFN27N80
DISTI # IXFN27N80-ND
IXYS CorporationMOSFET N-CH 800V 27A SOT-227B
RoHS: Compliant
Min Qty: 1
Container: Tube
93In Stock
  • 250:$23.3450
  • 100:$25.4380
  • 30:$27.3700
  • 10:$29.7850
  • 1:$32.2000
IXFN27N80Q
DISTI # IXFN27N80Q-ND
IXYS CorporationMOSFET N-CH 800V 27A SOT-227B
RoHS: Compliant
Min Qty: 10
Container: Tube
Temporarily Out of Stock
  • 10:$29.7850
IXFN27N80
DISTI # 747-IXFN27N80
IXYS CorporationMOSFET 800V 27A
RoHS: Compliant
0
    IXFN27N80Q
    DISTI # 747-IXFN27N80Q
    IXYS CorporationMOSFET 27 Amps 800V 0.32 Rds
    RoHS: Compliant
    0
      IXFN27N80Q
      DISTI # 4905593
      IXYS CorporationMOSFET, N, SOT-227B
      RoHS: Compliant
      0
      • 1:£21.7200
      • 5:£21.4100
      • 10:£21.1100
      • 50:£20.8000
      • 100:£18.5200
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      Availability
      Stock:
      Available
      On Order:
      3000
      Enter Quantity:
      Current price of IXFN27N80 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      20
      $29.79
      $595.80
      30
      $27.37
      $821.10
      50
      $26.21
      $1 310.50
      100
      $25.44
      $2 544.00
      200
      $23.34
      $4 668.00
      500
      $22.22
      $11 110.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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