IXFN38N100Q2

Mfr. #:: IXFN38N100Q2
Manufacturer:: IXYS
Description:: MOSFET 38 Amps 1000V 0.25 Rds
Lifecycle:: New from this manufacturer.
Datasheet:: IXFN38N100Q2 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer: IXYS

Product Category: Module

Series: HiPerFET

Packaging: Tube

Unit-Weight: 1.340411 oz

Mounting-Style: SMD/SMT

Tradename: HyperFET

Package-Case: SOT-227-4, miniBLOC

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Chassis Mount

Number-of-Channels: 1 Channel

Supplier-Device-Package: SOT-227B

Configuration: Single Dual Source

FET-Type: MOSFET N-Channel, Metal Oxide

Power-Max: 890W

Transistor-Type: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 1000V (1kV)

Input-Capacitance-Ciss-Vds: 7200pF @ 25V

FET-Feature: Standard

Current-Continuous-Drain-Id-25°C: 38A

Rds-On-Max-Id-Vgs: 250 mOhm @ 19A, 10V

Vgs-th-Max-Id: 5V @ 8mA

Gate-Charge-Qg-Vgs: 250nC @ 10V

Pd-Power-Dissipation: 890 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 15 ns

Rise-Time: 28 ns

Vgs-Gate-Source-Voltage: 30 V

Id-Continuous-Drain-Current: 38 A

Vds-Drain-Source-Breakdown-Voltage: 1000 V

Rds-On-Drain-Source-Resistance: 250 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 57 ns

Typical-Turn-On-Delay-Time: 25 ns

Channel-Mode: Enhancement

Tags: IXFN38N1, IXFN38, IXFN3, IXFN, IXF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXFN38N100Q2 Description

***ource: N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr

***ical: Trans MOSFET N-CH 1KV 38A 4-Pin SOT-227B

***enic: 1kV 38A 250m´Î@10V19A 890W 5V@8mA N Channel SOT-227B MOSFETs ROHS

*** Stop Electro: Power Field-Effect Transistor, 38A I(D), 1000V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Market price

Part #	Mfg.	Description	Stock	Price
IXFN38N100Q2 DISTI # IXFN38N100Q2-ND	IXYS Corporation	MOSFET N-CH 1000V 38A SOT-227 RoHS: Compliant Min Qty: 10 Container: Tube	Limited Supply - Call
IXFN38N100Q2 DISTI # 747-IXFN38N100Q2	IXYS Corporation	MOSFET 38 Amps 1000V 0.25 Rds RoHS: Compliant	0

Related products

Image	Part #	Description
	Mfr.#: IXFN38N100P OMO.#: OMO-IXFN38N100P	MOSFET 38 Amps 1000V
	Mfr.#: IXFN38N80Q2 OMO.#: OMO-IXFN38N80Q2	MOSFET 38 Amps 800V 0.22 Rds
	Mfr.#: IXFN38N100 OMO.#: OMO-IXFN38N100-1190	New and Original
	Mfr.#: IXFN38N100P OMO.#: OMO-IXFN38N100P-IXYS-CORPORATION	MOSFET N-CH 1000V 38A SOT-227B
	Mfr.#: IXFN38N100Q2 OMO.#: OMO-IXFN38N100Q2-IXYS-CORPORATION	MOSFET 38 Amps 1000V 0.25 Rds
	Mfr.#: IXFN38N80Q2 OMO.#: OMO-IXFN38N80Q2-IXYS-CORPORATION	MOSFET 38 Amps 800V 0.22 Rds

Availability

Stock:: Available
On Order:: 3000
Enter Quantity:

Current price of IXFN38N100Q2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.00~~; ~~$0.00~~

10: ~~$0.00~~; ~~$0.00~~

100: ~~$0.00~~; ~~$0.00~~

500: ~~$0.00~~; ~~$0.00~~

1000: ~~$0.00~~; ~~$0.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

IXFN38N1 3
IXFN38 4
IXFN3 28
IXFN 165
IXF 1494

IXFN38N100Q2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes