PartNumber | IXFN320N17T2 | IXFN300N10P | IXFN300N20X3 |
Description | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | MOSFET Polar Power MOSFET HiPerFET | MOSFET DISCMSFT NCHULTRJNCTX3CLAS (MI |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | - |
Mounting Style | Chassis Mount | Chassis Mount | - |
Package / Case | SOT-227-4 | SOT-227-4 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 170 V | 100 V | - |
Id Continuous Drain Current | 260 A | 295 A | - |
Rds On Drain Source Resistance | 5.2 mOhms | 5.5 mOhms | - |
Vgs th Gate Source Threshold Voltage | 5 V | 5 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 640 nC | 279 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 1.07 kW | 1.07 kW | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | HiPerFET | HiPerFET | HiPerFET |
Packaging | Tube | Tube | Tube |
Series | IXFN320N17 | IXFN300N10 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Type | GigaMOS Trench T2 HiperFet | Polar Power MOSFET HiPerFET | - |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 120 S | 55 S | - |
Fall Time | 230 ns | 25 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 170 ns | 35 ns | - |
Factory Pack Quantity | 10 | 10 | 10 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 115 ns | 56 ns | - |
Typical Turn On Delay Time | 46 ns | 36 ns | - |
Unit Weight | 1.058219 oz | 1.058219 oz | - |
Height | - | 12.22 mm | - |
Length | - | 38.23 mm | - |
Width | - | 25.42 mm | - |