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IXFN320N17T2

IXFN320N17T2
Mfr. #:
IXFN320N17T2
Manufacturer:
Littelfuse
Description:
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
IXFN320N17T2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN320N17T2 DatasheetIXFN320N17T2 Datasheet (P4-P6)
ECAD Model:
More Information:
IXFN320N17T2 more Information
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Chassis Mount
Package / Case:
SOT-227-4
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
170 V
Id - Continuous Drain Current:
260 A
Rds On - Drain-Source Resistance:
5.2 mOhms
Vgs th - Gate-Source Threshold Voltage:
5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
640 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
1.07 kW
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
HiPerFET
Packaging:
Tube
Series:
IXFN320N17
Transistor Type:
1 N-Channel
Type:
GigaMOS Trench T2 HiperFet
Brand:
IXYS
Forward Transconductance - Min:
120 S
Fall Time:
230 ns
Product Type:
MOSFET
Rise Time:
170 ns
Factory Pack Quantity:
10
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
115 ns
Typical Turn-On Delay Time:
46 ns
Unit Weight:
1.058219 oz
Tags
IXFN32, IXFN3, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
Part # Mfg. Description Stock Price
IXFN320N17T2
DISTI # V99:2348_15877085		IXYS CorporationTrans MOSFET N-CH 170V 260A 4-Pin SOT-227B
RoHS: Compliant		0
  • 10000:$24.1400
  • 5000:$24.1500
  • 1000:$27.3500
  • 100:$35.5200
  • 10:$37.0600
IXFN320N17T2
DISTI # IXFN320N17T2-ND		IXYS CorporationMOSFET N-CH 170V 260A SOT227
RoHS: Compliant
Min Qty: 10
Container: Tube		Temporarily Out of Stock
  • 10:$34.2810
IXFN320N17T2
DISTI # 747-IXFN320N17T2		IXYS CorporationMOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant		24
  • 1:$37.0600
  • 5:$35.2100
  • 10:$34.2800
  • 25:$31.5000
  • 50:$30.1600
  • 100:$29.2800
  • 200:$26.8700
IXFN320N17T2
DISTI # IXFN320N17T2		IXYS CorporationN-Ch 170V 260A 1070W 0,0052R SOT227B
RoHS: Compliant		9
  • 1:€30.0000
  • 5:€26.0000
  • 10:€24.0000
  • 25:€23.1000
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 New and Original
Availability
Stock:
24
On Order:
2007
Enter Quantity:
Current price of IXFN320N17T2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$37.06
$37.06
5
$35.21
$176.05
10
$34.28
$342.80
25
$31.50
$787.50
50
$30.16
$1 508.00
100
$29.28
$2 928.00
200
$26.87
$5 374.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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