PartNumber | IXFN32N100P | IXFN320N17T2 | IXFN32N100Q3 |
Description | MOSFET 32 Amps 1000V 0.32 Rds | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28A |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
Package / Case | SOT-227-4 | SOT-227-4 | SOT-227-4 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 1 kV | 170 V | 1 kV |
Id Continuous Drain Current | 27 A | 260 A | 28 A |
Rds On Drain Source Resistance | 320 mOhms | 5.2 mOhms | 320 mOhms |
Vgs th Gate Source Threshold Voltage | 6.5 V | 5 V | - |
Vgs Gate Source Voltage | 30 V | 20 V | 30 V |
Qg Gate Charge | 225 nC | 640 nC | 195 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 175 C | + 150 C |
Pd Power Dissipation | 690 W | 1.07 kW | 780 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Tradename | HiPerFET | HiPerFET | HiPerFET |
Packaging | Tube | Tube | Tube |
Height | 12.22 mm | - | - |
Length | 38.23 mm | - | - |
Series | IXFN32N100 | IXFN320N17 | IXFN32N1003 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | Polar Power MOSFET HiPerFET | GigaMOS Trench T2 HiperFet | - |
Width | 25.42 mm | - | - |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 13 S | 120 S | - |
Fall Time | 43 ns | 230 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 55 ns | 170 ns | 300 ns |
Factory Pack Quantity | 10 | 10 | 10 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 76 ns | 115 ns | - |
Typical Turn On Delay Time | 50 ns | 46 ns | - |
Unit Weight | 1.058219 oz | 1.058219 oz | 1.058219 oz |