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IXFN32N100Q3

IXFN32N100Q3
Mfr. #:
IXFN32N100Q3
Manufacturer:
Littelfuse
Description:
IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28A
Lifecycle:
New from this manufacturer.
Datasheet:
IXFN32N100Q3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IXFN32N100Q3 more Information
Product Attribute
Attribute Value
Manufacturer
IXYS
Product Category
Transistors - FETs, MOSFETs - Single
Series
IXFN32N1003
Packaging
Tube
Unit-Weight
1.340411 oz
Mounting-Style
SMD/SMT
Tradename
HyperFET
Package-Case
SOT-227-4
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
780 W
Maximum-Operating-Temperature
+ 150 C
Rise-Time
300 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuous-Drain-Current
28 A
Vds-Drain-Source-Breakdown-Voltage
1000 V
Rds-On-Drain-Source-Resistance
320 mOhms
Transistor-Polarity
N-Channel
Qg-Gate-Charge
195 nC
Tags
IXFN32N1, IXFN32N, IXFN32, IXFN3, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Part # Mfg. Description Stock Price
IXFN32N100Q3
DISTI # IXFN32N100Q3-ND		IXYS CorporationMOSFET N-CH 1000V 28A SOT-227
RoHS: Compliant
Min Qty: 1
Container: Tube		10In Stock
  • 100:$36.9000
  • 30:$39.3600
  • 10:$42.5580
  • 1:$45.5100
IXFN32N100Q3
DISTI # 747-IXFN32N100Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28A
RoHS: Compliant		0
  • 1:$45.5100
  • 5:$43.9100
  • 10:$42.5600
  • 25:$39.3600
  • 50:$38.1900
  • 100:$36.9000
  • 200:$34.4400
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Mfr.#: IXFN32N120

OMO.#: OMO-IXFN32N120-1190

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IXFN32N120P

Mfr.#: IXFN32N120P

OMO.#: OMO-IXFN32N120P-IXYS-CORPORATION

 MOSFET N-CH 1200V 32A SOT-227B
IXFN32N100P

Mfr.#: IXFN32N100P

OMO.#: OMO-IXFN32N100P-IXYS-CORPORATION

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IXFN32N60

Mfr.#: IXFN32N60

OMO.#: OMO-IXFN32N60-IXYS-CORPORATION

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Availability
Stock:
Available
On Order:
2000
Enter Quantity:
Current price of IXFN32N100Q3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$51.66
$51.66
10
$49.08
$490.77
100
$46.49
$4 649.40
500
$43.91
$21 955.50
1000
$41.33
$41 328.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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