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| PartNumber | IXFN32N100P | IXFN32N100Q3 | IXFN32N120 |
| Description | MOSFET 32 Amps 1000V 0.32 Rds | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28A | Trans MOSFET N-CH Si 1.2KV 32A 4-Pin SOT-227B |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Chassis Mount | Chassis Mount | - |
| Package / Case | SOT-227-4 | SOT-227-4 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1 kV | 1 kV | - |
| Id Continuous Drain Current | 27 A | 28 A | - |
| Rds On Drain Source Resistance | 320 mOhms | 320 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 6.5 V | - | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 225 nC | 195 nC | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 690 W | 780 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | HiPerFET | HiPerFET | - |
| Packaging | Tube | Tube | - |
| Height | 12.22 mm | - | - |
| Length | 38.23 mm | - | - |
| Series | IXFN32N100 | IXFN32N1003 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | Polar Power MOSFET HiPerFET | - | - |
| Width | 25.42 mm | - | - |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 13 S | - | - |
| Fall Time | 43 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 55 ns | 300 ns | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 76 ns | - | - |
| Typical Turn On Delay Time | 50 ns | - | - |
| Unit Weight | 1.058219 oz | 1.058219 oz | - |