IXFN360N10T

IXFN360N10T
Mfr. #:
IXFN360N10T
Manufacturer:
Littelfuse
Description:
MOSFET N-CH 100V 360A SOT-227B
Lifecycle:
New from this manufacturer.
Datasheet:
IXFN360N10T Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IXFN360N10T more Information
Product Attribute
Attribute Value
Tags
IXFN360, IXFN36, IXFN3, IXFN, IXF
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 10, N-Channel MOSFET, 360 A, 100 V, 4-Pin SOT-227 IXYS IXFN360N10T
***ure Electronics
Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B
***p One Stop Japan
Trans MOSFET N-CH 100V 360A 4-Pin SOT-227B
*** Source Electronics
GigaMOS Trench HiperFET Power MOSFET
***i-Key
MOSFET N-CH 100V 360A SOT-227B
***ukat
N-Ch 100V 360A 830W 0,0026R SOT227B
***ark
Mosfet Module, N-Ch, 100V, 360A; Transistor Polarity:n Channel; Continuous Drain Current Id:360A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0026Ohm; Rds(On) Test Voltage Vgs:100V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET MODULE, N-CH, 100V, 360A; Transistor Polarity:N Channel; Continuous Drain Current Id:360A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:100V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:830W; Operating Temperature Max:175°C; Product Range:Trench HiperFET Series; SVHC:No SVHC (07-Jul-2017)
***nell
MODULO MOSFET, CA-N, 100V, 360A; Polarità Transistor:Canale N; Corrente Continua di Drain Id:360A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0026ohm; Tensione Vgs di Misura Rds(on):100V; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:830W; Temperatura di Esercizio Max:175°C; Gamma Prodotti:Trench HiperFET Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Part # Mfg. Description Stock Price
IXFN360N10T
DISTI # V36:1790_15877367
IXYS CorporationTrans MOSFET N-CH 100V 360A 4-Pin SOT-227B
RoHS: Compliant
0
    IXFN360N10T
    DISTI # IXFN360N10T-ND
    IXYS CorporationMOSFET N-CH 100V 360A SOT-227B
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    608In Stock
    • 500:$13.8330
    • 100:$16.2180
    • 30:$17.6490
    • 10:$19.0800
    • 1:$20.9900
    IXFN360N10T
    DISTI # 747-IXFN360N10T
    IXYS CorporationMOSFET 360 Amps 100V
    RoHS: Compliant
    591
    • 1:$20.9900
    • 10:$19.0800
    • 20:$17.6400
    • 50:$16.9200
    • 100:$16.2100
    • 200:$14.7800
    • 500:$13.8300
    IXFN360N10T
    DISTI # 1258041
    IXYS CorporationMOSFET 360A 100V SOT227, EA79
    • 20:£13.5700
    • 10:£13.8500
    • 5:£14.3500
    • 2:£15.0200
    • 1:£16.6800
    IXFN360N10T
    DISTI # IXFN360N10T
    IXYS CorporationModule,single transistor,100V,360A,SOT227B,Ugs: ±30V,screw58
    • 10:$15.6500
    • 3:$17.7900
    • 1:$19.7100
    IXFN360N10T
    DISTI # IXFN360N10T
    IXYS CorporationN-Ch 100V 360A 830W 0,0026R SOT227B
    RoHS: Compliant
    46
    • 1:€16.5000
    • 5:€13.5000
    • 10:€12.5000
    • 25:€12.0500
    IXFN360N10T
    DISTI # 2784061
    IXYS CorporationMOSFET MODULE, N-CH, 100V, 360A
    RoHS: Compliant
    11
    • 100:£11.7300
    • 50:£13.4300
    • 10:£14.0000
    • 5:£15.3300
    • 1:£16.6500
    IXFN360N10T
    DISTI # 2784061
    IXYS CorporationMOSFET MODULE, N-CH, 100V, 360A
    RoHS: Compliant
    0
    • 100:$21.3700
    • 50:$22.0400
    • 10:$22.8200
    • 5:$24.1200
    • 1:$24.5800
    Image Part # Description
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    Mfr.#: IXFN360N15T2

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    Mfr.#: IXFN32N60

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    Mfr.#: IXFN30N110P

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    Mfr.#: IXFN39N90

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    MOSFET 39 Amps 900V 0.2 Rds
    IXFN38N100Q2

    Mfr.#: IXFN38N100Q2

    OMO.#: OMO-IXFN38N100Q2-IXYS-CORPORATION

    MOSFET 38 Amps 1000V 0.25 Rds
    IXFN340N06

    Mfr.#: IXFN340N06

    OMO.#: OMO-IXFN340N06-IXYS-CORPORATION

    MOSFET 340 Amps 60V 0.003 Rds
    IXFN32N60

    Mfr.#: IXFN32N60

    OMO.#: OMO-IXFN32N60-IXYS-CORPORATION

    MOSFET 32 Amps 600V
    IXFN34N80

    Mfr.#: IXFN34N80

    OMO.#: OMO-IXFN34N80-IXYS-CORPORATION

    MOSFET 34 Amps 800V 0.24 Rds
    Availability
    Stock:
    Available
    On Order:
    3000
    Enter Quantity:
    Current price of IXFN360N10T is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.00
    $0.00
    10
    $0.00
    $0.00
    100
    $0.00
    $0.00
    500
    $0.00
    $0.00
    1000
    $0.00
    $0.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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