PartNumber | IXFN360N10T | IXFN360N15T2 | IXFN36N100 |
Description | MOSFET 360 Amps 100V | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | MOSFET 1KV 36A |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
Package / Case | SOT-227-4 | SOT-227-4 | SOT-227-4 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 150 V | 1 kV |
Id Continuous Drain Current | 360 A | 310 A | 36 A |
Rds On Drain Source Resistance | 2.6 mOhms | 4 mOhms | 240 mOhms |
Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
Vgs Gate Source Voltage | 10 V | - | 20 V |
Qg Gate Charge | 525 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 150 C |
Pd Power Dissipation | 830 W | - | 700 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | HiPerFET | HiPerFET | HyperFET |
Packaging | Tube | Tube | Tube |
Product | MOSFET Power | - | - |
Series | IXFN360N10 | IXFN360N15 | IXFN36N100 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | Power MOSFET | GigaMOS Trench T2 HiperFet | - |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 110 S | - | 40 S |
Fall Time | 160 ns | 265 ns | 30 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 100 ns | 170 ns | 55 ns |
Factory Pack Quantity | 10 | 10 | 10 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 80 ns | - | 110 ns |
Typical Turn On Delay Time | 47 ns | - | 41 ns |
Unit Weight | 1.058219 oz | 1.058219 oz | 1.058219 oz |
Height | - | - | 9.6 mm |
Length | - | - | 38.23 mm |
Width | - | - | 25.42 mm |