IXFN36

IXFN360N10T vs IXFN360N15T2 vs IXFN36N100

 
PartNumberIXFN360N10TIXFN360N15T2IXFN36N100
DescriptionMOSFET 360 Amps 100VMOSFET GigaMOS Trench T2 HiperFET PWR MOSFETMOSFET 1KV 36A
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleChassis MountChassis MountChassis Mount
Package / CaseSOT-227-4SOT-227-4SOT-227-4
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V150 V1 kV
Id Continuous Drain Current360 A310 A36 A
Rds On Drain Source Resistance2.6 mOhms4 mOhms240 mOhms
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage10 V-20 V
Qg Gate Charge525 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 150 C
Pd Power Dissipation830 W-700 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
TradenameHiPerFETHiPerFETHyperFET
PackagingTubeTubeTube
ProductMOSFET Power--
SeriesIXFN360N10IXFN360N15IXFN36N100
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypePower MOSFETGigaMOS Trench T2 HiperFet-
BrandIXYSIXYSIXYS
Forward Transconductance Min110 S-40 S
Fall Time160 ns265 ns30 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time100 ns170 ns55 ns
Factory Pack Quantity101010
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time80 ns-110 ns
Typical Turn On Delay Time47 ns-41 ns
Unit Weight1.058219 oz1.058219 oz1.058219 oz
Height--9.6 mm
Length--38.23 mm
Width--25.42 mm
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXFN360N10T MOSFET 360 Amps 100V
IXFN360N15T2 MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
IXFN36N100 MOSFET 1KV 36A
IXFN36N60 MOSFET 600V 36A
IXFN36-100 New and Original
IXFN360N10T MOSFET N-CH 100V 360A SOT-227B
IXFN360N15 New and Original
IXFN360N15T2 MOSFET N-CH 150V 310A SOT227
IXFN36N50 New and Original
IXFN36N110P MOSFET N-CH 1100V 36A SOT-227B
IXFN36N60 MOSFET 600V 36A
IXFN36N100 IGBT Transistors MOSFET 1KV 36A
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